Infineon Technologies AG Single FETs, MOSFETs IRF7201

Description
N-Channel 30V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
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Description
N-Channel 30V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF7201-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7201-ND
Single FETs, MOSFETs IRF7201-ND
N-Channel 30V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO

N-Channel 30V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO

Buy Now Datasheet
FETs - Single - IRF7201 - 1187171-IRF7201 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF7201
1187171-IRF7201
FETs - Single - IRF7201 1187171-IRF7201
Manufacturer: Infineon Technologies Win Source Part Number: 1187171-IRF7201 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 95 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 7.3A Rds On (Maximum) at Id, Vgs: 30mOhm at 7.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 28nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187171-IRF7201
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 95
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 7.3A
Rds On (Maximum) at Id, Vgs: 30mOhm at 7.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 28nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7201 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7201
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7201
MOSFET N-CH 30V 7.3A 8SO

MOSFET N-CH 30V 7.3A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IRF7201-ND 1187171-IRF7201 IRF7201
Product Name Single FETs, MOSFETs FETs - Single - IRF7201 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
QG 28 nC
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