Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R190CFD7 IPT65R190CFD7

Description
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R190CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650 V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure
Request a Quote Datasheet
Description
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R190CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650 V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R190CFD7 - IPT65R190CFD7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R190CFD7
IPT65R190CFD7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R190CFD7 IPT65R190CFD7
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R190CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650 V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure

The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R190CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.


Summary of Features

  • Ultrafast body diode and very low Qrr
  • 650 V breakdown voltage
  • Significantly reduced switching losses compared to competition
  • Lowest RDS(on) dependency over temperature

Benefits

  • Excellent hard-commutation ruggedness
  • Extra safety margin for designs with increased bus voltage
  • Enabling increased power density
  • Outstanding light-load efficiency in industrial SMPS applications
  • Improved full-load efficiency in industrial SMPS applications
  • Price competitiveness compared to alternative offerings in the market

Potential Applications

  • Fast EV charging
  • Server power supply
  • Solutions for solar energy systems
  • Telecom infrastructure
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT65R190CFD7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R190CFD7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1900 ohms
Unlock Full Specs
to access all available technical data