The IPT65R040CFD7 is a 650 V CoolMOS™ CFD7 superjunction MOSFET designed for high-efficiency resonant switching topologies such as LLC and phase-shift full-bridge. It is packaged in a PG-HSOF-8 case, measuring 10.28 to 10.58 mm in length and 9.70 to 10.10 mm in width. The device has a maximum on-state resistance of 40 mΩ at 25°C, a pulsed drain current of 211 A, and a gate charge of 97 nC. It features an ultra-fast body diode with a maximum reverse recovery current of 11.8 A and a di/dt commutation capability of 1300 A/µs. The MOSFET is fully qualified according to JEDEC for industrial applications and supports operating junction temperatures from -55°C to 150°C.
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R040CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT65R040CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R040CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0400 ohms |
| QG | 97 nC |
