Infineon Technologies AG N-Channel Power MOSFET IRF2804S

The IRF2804S is a 40V N-channel HEXFET Power MOSFET in a D2Pak package, designed for high-current switching applications. It features a maximum continuous drain current of 75A at 25°C case temperature, an on-resistance of 1.5mΩ to 2.0mΩ at 10V gate-source voltage and 75A drain current, and operates with a maximum junction temperature of 175°C. The device supports repetitive avalanche energy with a single pulse rating of 1160mJ and has a gate charge of 160nC to 240nC. Thermal resistance from junction to case is 0.50°C/W. It meets RoHS standards and is qualified for industrial use.