Infineon Technologies AG Datasheets for RF Diodes
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.
RF Diodes: Learn more
| Product Name | Notes |
|---|---|
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 40V Potential Applications Circuit protection Voltage clamping High-level detecting and mixing Quality level for Engineering Models Applications... | |
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 70V Potential Applications Circuit protection Voltage clamping High-level detecting and mixing Quality level for Engineering Models Applications... | |
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 70V ESA Space Qualified ESCC Detail Spec. No.:5512/020/03 B Potential Applications Circuit protection Voltage clamping High-level detecting... | |
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 70V ESA Space Qualified ESCC Detail Spec. No.:5512/020/03 B Potential Applications Circuit protection Voltage clamping High-level detecting... | |
| General-purpose diodes for high-speedswitching Summary of Features Hermetically sealed microwave package VBRmin 40V ESA Space Qualified ESCC Detail Spec. No.:5512/020/01 B Potential Applications Circuit protection Voltage clamping High-level detecting and... | |
| General-purpose diodes for high-speedswitching Summary of Features Hermetically sealed microwave package VBRmin 40V ESA Space Qualified ESCC Detail Spec. No.:5512/020/01 B Potential Applications Circuit protection Voltage clamping High-level detecting and... | |
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| Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and... | |
| PIN Diode for high speed switching of Summary of Features High reverse voltage VBRmin 150V Potential Applications Current controlled RF resistor for RF attenuators and switches Quality level for Engineering... | |
| PIN Diode for high speed switching of Summary of Features High reverse voltage VBRmin 150V Potential Applications Current controlled RF resistor for RF attenuators and switches Quality level for Engineering... | |
| PIN Diode for high speed switching of Summary of Features High reverse voltage VBRmin 150V ESA Space Qualified ESCC Detail Spec. No.: 5513/030/02 B Potential Applications Current controlled RF resistor... | |
| PIN Diode for high speed switching of Summary of Features High reverse voltage VBRmin 150V ESA Space Qualified ESCC Detail Spec. No.: 5513/030/02 B Potential Applications Current controlled RF resistor... | |
| PIN Diode for high speed switching Summary of Features HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals Very low capacitance Hermetically sealed microwave package... | |
| PIN Diode for high speed switching Summary of Features Very low capacitance Hermetically sealed microwave package VBRmin 50V ESA Space Qualified ESCC Detail Spec. No.: 5512/020/01 B Applications Space applications... | |
| Silicon PIN Diode Summary of Features Current-controlled RF resistor for switching and attenuating applications Frequency range 1 MHz ... 2 GHz Especially useful as antenna switch in TV-sat tuners Very... | |
| Silicon PIN Diode Summary of Features For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.25 pF) Low... | |
| Silicon PIN Diode Summary of Features RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics Pb-free (RoHS compliant) package Potential Applications Wireless... | |
| Silicon PIN Diode Summary of Features Series diode for mobile communication in low loss transmit-receiver switches Band switch for TV-tuners Very low forward resistance (typ. 0.65 Ω @ 5 mA)... | |
| Silicon PIN Diodes Summary of Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile... | |
| Silicon PIN Diodes Summary of Features PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up... | |
| Silicon RF Switching Diode Summary of Features For band switching in TV/VTR tuners and mobile applications Very low forward resistance (typ. 0.45 Ω @ 3 mA) Small capacitance Pb-free (RoHS... | |
| Silicon RF Switching Diode Summary of Features Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance Pb-free (RoHS compliant) package Potential Applications Set Top Box... | |
| Silicon Schottky Diodes Summary of Features For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base... | |
| Silicon Schottky Diodes Summary of Features For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed... | |
| Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies For high-speed applications Zero bias detector diode Pb-free (RoHS compliant) package Potential Applications Wireless Communications... | |
| Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data... | |
| Silicon Tuning Diode Summary of Features Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation for VCO's in mobile communications... | |
| Silicon Tuning Diode Summary of Features For SAT tuners High capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure Pb-free (RoHS compliant) package | |
| Silicon Tuning Diode Summary of Features For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure Pb-free (RoHS compliant)... | |
| Silicon Tuning Diode Summary of Features High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage Pb-free... | |
| Silicon Tuning Diode Summary of Features High Q hyperabrupt tuning diode Very low capacitance spread Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency... | |
| Silicon Tuning Diodes Summary of Features Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment For low... | |
| Silicon Tuning Diodes Summary of Features Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low... | |
| Silicon Tuning Diodes Summary of Features High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very... | |
| Silicon Variable Capacitance Diode Summary of Features For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and... | |
| Silicon Variable Capacitance Diode Summary of Features For FM radio tuner with extended frequency band High tuning ratio at low supply voltage (car radio) Monolitic chip (common cathode) for perfect... | |
| Silicon Variable Capacitance Diode Summary of Features For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect... | |
| Silicon Variable Capacitance Diode Summary of Features For VHF tuned circuit applications High figure of merit Pb-free (RoHS compliant) package | |
| Silicon Variable Capcitance Diode Summary of Features For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity... | |
| Silicon Variable Capcitance Diode Summary of Features For VHF TV / VTR tuners Pb-free (RoHS compliant) package | |
| These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction... | |
| This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications. Summary... | |
| This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and... | |
| This Infineon RF PIN diode provides high-voltage handling capabilities and comes with low loss and low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design and... | |
| This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design-in and... | |
| This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design-in and... | |
| This Infineon RF PIN diodes provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low forward... | |
| This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low... | |
| This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low... | |
| This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction... |