Infineon Technologies AG Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7237U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN9240 A... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package - A JANTXV2N7336 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Quad N-Channel MOSFET in a MO-036AB package - A JANTXV2N7334 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG110 A IRFG110... | |
| 100V Quad P-Channel MOSFET in a MO-036AB package - A JANTXV2N7335 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG9110 A IRFG9110... | |
| 400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7227U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN350 A... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Repetitive avalanche ratings Dynamic... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Ultra low RDS(on) Low total gate... | |
| -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Industry-leading quality P-Channel MOSFET Applications Integrated and discrete solutions for Personal Care products Designers who used this... | |
| Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary... | |
| N-channel enhancement mode small signal transistor for industrial and consumer applications in SOT-23-3 package The N-channel enhancement mode MOSFET SN7002I in SOT-23-3 package features VDS 60 V and R... | |
| N-Channel Small Signal MOSFET 60 V in SOT-323 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed... | |
| P-channel enhancement mode Field-Effect Transistor (FET), -60V, D2PAK Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications... | |
| P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications... | |
| P-Channel Power MOSFET -100 V in DPAK package Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications... | |
| P-Channel Power MOSFET in DPAK package Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power... |
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