Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPT60R040S7

Description
Infineon’s best price performance 600V CoolMOS™ S7 Superjunction MOSFET for low frequency switching applications in TO-Leadless (TOLL) package Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R040S7) in TO-Leadless (Pb-free) package features a design optimized for low conduction performance. The IPT60R040S7 boasts the best RDS(on) x price for low frequency switching applications, like active bridge rectification, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relay (SSR) and solid state circuit breakers (SSCB). This 600V CoolMOS™ S7 SJ MOSFET comes with enhanced energy efficiency and lower BOM expenses. Summary of Features Low RDS(on) in SMD packages Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin source pin improves switching performance at high current The TOLL package is MSL1 compliant, total Pb-free and has easy visual inspection leads Benefits Minimize conduction losses Increase energy efficiency More compact and easier designs Eliminate or reduce heat sink in solid state design Lower total cost of ownership (TCO) or bill-of-material (BOM) cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning Applications 48 V intermediate bus converter (IBC) Complete system solutions for smart TVs DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSS84P | Small signal/small power MOSFET IDL04G65C5 | CoolSiC™ Schottky Diodes BSC007N04LS6 | N-Channel Power MOSFET ICE5QR1680AG | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSS84P | Small signal/small power MOSFET IDL04G65C5 | CoolSiC™ Schottky Diodes BSC007N04LS6 | N-Channel Power MOSFET ICE5QR1680AG | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes 1 2
  • 500V-950V N-Channel Power MOSFET - IPT60R040S7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Infineon’s best price performance 600V CoolMOS™ S7 Superjunction MOSFET for low frequency switching applications in TO-Leadless (TOLL) package Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R040S7) in TO-Leadless (Pb-free) package features a design optimized for low conduction performance. The IPT60R040S7 boasts the best RDS(on) x price for low frequency switching applications, like active bridge rectification, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relay (SSR) and solid state circuit breakers (SSCB). This 600V CoolMOS™ S7 SJ MOSFET comes with enhanced energy efficiency and lower BOM expenses. Summary of Features Low RDS(on) in SMD packages Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin source pin improves switching performance at high current The TOLL package is MSL1 compliant, total Pb-free and has easy visual inspection leads Benefits Minimize conduction losses Increase energy efficiency More compact and easier designs Eliminate or reduce heat sink in solid state design Lower total cost of ownership (TCO) or bill-of-material (BOM) cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning Applications 48 V intermediate bus converter (IBC) Complete system solutions for smart TVs DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSS84P | Small signal/small power MOSFET IDL04G65C5 | CoolSiC™ Schottky Diodes BSC007N04LS6 | N-Channel Power MOSFET ICE5QR1680AG | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSS84P | Small signal/small power MOSFET IDL04G65C5 | CoolSiC™ Schottky Diodes BSC007N04LS6 | N-Channel Power MOSFET ICE5QR1680AG | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes 1 2
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500V-950V N-Channel Power MOSFET - IPT60R040S7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPT60R040S7
500V-950V N-Channel Power MOSFET IPT60R040S7
Infineon’s best price performance 600V CoolMOS™ S7 Superjunction MOSFET for low frequency switching applications in TO-Leadless (TOLL) package Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R040S7) in TO-Leadless (Pb-free) package features a design optimized for low conduction performance. The IPT60R040S7 boasts the best RDS(on) x price for low frequency switching applications, like active bridge rectification, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relay (SSR) and solid state circuit breakers (SSCB). This 600V CoolMOS™ S7 SJ MOSFET comes with enhanced energy efficiency and lower BOM expenses. Summary of Features Low RDS(on) in SMD packages Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin source pin improves switching performance at high current The TOLL package is MSL1 compliant, total Pb-free and has easy visual inspection leads Benefits Minimize conduction losses Increase energy efficiency More compact and easier designs Eliminate or reduce heat sink in solid state design Lower total cost of ownership (TCO) or bill-of-material (BOM) cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning Applications 48 V intermediate bus converter (IBC) Complete system solutions for smart TVs DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSS84P | Small signal/small power MOSFET IDL04G65C5 | CoolSiC™ Schottky Diodes BSC007N04LS6 | N-Channel Power MOSFET ICE5QR1680AG | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSS84P | Small signal/small power MOSFET IDL04G65C5 | CoolSiC™ Schottky Diodes BSC007N04LS6 | N-Channel Power MOSFET ICE5QR1680AG | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes 1 2

Infineon’s best price performance 600V CoolMOS™ S7 Superjunction MOSFET for low frequency switching applications in TO-Leadless (TOLL) package

Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R040S7) in TO-Leadless (Pb-free) package features a design optimized for low conduction performance. The IPT60R040S7 boasts the best RDS(on) x price for low frequency switching applications, like active bridge rectification, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relay (SSR) and solid state circuit breakers (SSCB). This 600V CoolMOS™ S7 SJ MOSFET comes with enhanced energy efficiency and lower BOM expenses.


Summary of Features

  • Low RDS(on) in SMD packages
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin source pin improves switching performance at high current
  • The TOLL package is MSL1 compliant, total Pb-free and has easy visual inspection leads

Benefits

  • Minimize conduction losses
  • Increase energy efficiency
  • More compact and easier designs
  • Eliminate or reduce heat sink in solid state design
  • Lower total cost of ownership (TCO) or bill-of-material (BOM) cost

Potential Applications

  • SMPS
  • Solar energy systems
  • Battery and equipment protection
  • Solid state relays (SSR) and solid state circuit breakers (SSCB)
  • Indoor commercial lighting control
  • UPS
  • Low speed electric vehicles (LSEV)
  • Programmable logic controllers (PLC)
  • Room air conditioning

Applications

  • 48 V intermediate bus converter (IBC)
  • Complete system solutions for smart TVs
  • DIN rail power supplies
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IDH08G65C6 |
    CoolSiC™ Schottky Diodes
  • BSS84P |
    Small signal/small power MOSFET
  • IDL04G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • ICE5QR1680AG |
    CoolSET™ Quasi Resonant
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IDH08G65C6 |
    CoolSiC™ Schottky Diodes
  • BSS84P |
    Small signal/small power MOSFET
  • IDL04G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • ICE5QR1680AG |
    CoolSET™ Quasi Resonant
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IDH08G65C6 |
    CoolSiC™ Schottky Diodes

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT60R040S7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0400 ohms
QG 83 nC
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