MOSFET 2P-CH 55V 3.4A 8-SOIC
Manufacturer: Infineon Technologies
Win Source Part Number: 1187231-IRF7342PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 P-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Family Part Number: IRF7342PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 3.4A
Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V
Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO
MOSFET 2P-CH 55V 3.4A 8SO Product overview: IRF7342PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7342PBF can be used for catalog matching and distributor lookup.
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
MOSFET 2P-CH 55V 3.4A 8SO
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Radwell International | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | RF Transistors |
| Product Number | IRF7342PBF | 1187231-IRF7342PBF | IRF7342PBF-ND | 289-IRF7342PBF | 17427198 | 70016988 | IRF7342PBF |
| Product Name | FET, MOSFET Arrays | FETs - Arrays - IRF7342PBF | FET, MOSFET Arrays | 55V 3.4A MOSFET Transistor | Transistor | -55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | -55 volts | |||
| IDSS | 3400 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
