Infineon Technologies AG FETs - Arrays - IRF7342PBF IRF7342PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187231-IRF7342PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Family Part Number: IRF7342PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187231-IRF7342PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Family Part Number: IRF7342PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Arrays - IRF7342PBF - 1187231-IRF7342PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - IRF7342PBF
1187231-IRF7342PBF
FETs - Arrays - IRF7342PBF 1187231-IRF7342PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187231-IRF7342PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Family Part Number: IRF7342PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187231-IRF7342PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 P-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Family Part Number: IRF7342PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 3.4A
Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V

Buy Now
FET, MOSFET Arrays - IRF7342PBF - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7342PBF
FET, MOSFET Arrays IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8-SOIC

MOSFET 2P-CH 55V 3.4A 8-SOIC

Supplier's Site Datasheet
Transistor - 17427198 - Radwell International
Willingboro, NJ, United States
Transistor
17427198
Transistor 17427198
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
FET, MOSFET Arrays - IRF7342PBF-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7342PBF-ND
FET, MOSFET Arrays IRF7342PBF-ND
Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO

Buy Now Datasheet
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE - 70016988 - Allied Electronics, Inc.
Fort Worth, TX, USA
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
70016988
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE 70016988
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE

-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7342PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7342PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8SO

MOSFET 2P-CH 55V 3.4A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Radwell International DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Power MOSFET RF Transistors
Product Number 1187231-IRF7342PBF IRF7342PBF 17427198 IRF7342PBF-ND 70016988 IRF7342PBF
Product Name FETs - Arrays - IRF7342PBF FET, MOSFET Arrays Transistor FET, MOSFET Arrays -55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; 2 P-Channel (Dual) P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 55 volts 55 volts -55 volts
QG 38 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" SO-8
Unlock Full Specs
to access all available technical data

Similar Products

CSD18503KCS 40V N-Channel NexFET? Power MOSFET... . - CSD18503KCS - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 40 volts
rDS(on) 0.0068 ohms
View Details
6 suppliers
Power MOSFETs - SuperFAP-E3 Model: FMV06N90E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
V(BR)DSS 900 volts
rDS(on) 2.5 ohms
IDSS 6000 milliamps
View Details
Single FETs, MOSFETs - BSB012NE2LXTR-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type 3-WDSON
View Details
3 suppliers