Infineon Technologies AG FETs - Arrays - IRF7342PBF IRF7342PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187231-IRF7342PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Family Part Number: IRF7342PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V
  • FETs - Arrays - IRF7342PBF - 1187231-IRF7342PBF - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - IRF7342PBF-ND - DigiKey
    DigiKey
  • Transistor - 17427198 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7342PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • -55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE - 70016988 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • FET, MOSFET Arrays - IRF7342PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187231-IRF7342PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Family Part Number: IRF7342PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Arrays - IRF7342PBF - 1187231-IRF7342PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - IRF7342PBF
1187231-IRF7342PBF
FETs - Arrays - IRF7342PBF 1187231-IRF7342PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187231-IRF7342PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Family Part Number: IRF7342PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187231-IRF7342PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 P-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Family Part Number: IRF7342PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 3.4A
Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V

Buy Now
FET, MOSFET Arrays - IRF7342PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7342PBF-ND
FET, MOSFET Arrays IRF7342PBF-ND
Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
55V 3.4A MOSFET Transistor
289-IRF7342PBF
55V 3.4A MOSFET Transistor 289-IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8SO Product overview: IRF7342PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7342PBF can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 55V 3.4A 8SO Product overview: IRF7342PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7342PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 17427198 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
17427198
Transistor 17427198
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7342PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7342PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8SO

MOSFET 2P-CH 55V 3.4A 8SO

Supplier's Site
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE - 70016988 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
70016988
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE 70016988
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE

-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE

Supplier's Site
FET, MOSFET Arrays - IRF7342PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7342PBF
FET, MOSFET Arrays IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8-SOIC

MOSFET 2P-CH 55V 3.4A 8-SOIC

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Radwell International Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. ODG (Origin Data Global)
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187231-IRF7342PBF IRF7342PBF-ND 289-IRF7342PBF 17427198 IRF7342PBF 70016988 IRF7342PBF
Product Name FETs - Arrays - IRF7342PBF FET, MOSFET Arrays 55V 3.4A MOSFET Transistor Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs -55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE FET, MOSFET Arrays
Polarity P-Channel; 2 P-Channel (Dual) P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 55 volts 55 volts -55 volts 55 volts
QG 38 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 "8-SOIC (0.154"", 3.90mm Width)" Tube SO-8 8-SOIC (0.154", 3.90mm Width)
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