Infineon Technologies AG FET, MOSFET Arrays IRF7342PBF

Description
Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO
  • FET, MOSFET Arrays - IRF7342PBF-ND - DigiKey
    DigiKey
  • Transistor - 17427198 - Radwell International
    Radwell International
  • FETs - Arrays - IRF7342PBF - 1187231-IRF7342PBF - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - IRF7342PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • -55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE - 70016988 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7342PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - IRF7342PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7342PBF-ND
FET, MOSFET Arrays IRF7342PBF-ND
Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO

Buy Now Datasheet
Transistor - 17427198 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
17427198
Transistor 17427198
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
FETs - Arrays - IRF7342PBF - 1187231-IRF7342PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - IRF7342PBF
1187231-IRF7342PBF
FETs - Arrays - IRF7342PBF 1187231-IRF7342PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187231-IRF7342PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Family Part Number: IRF7342PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187231-IRF7342PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 P-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Family Part Number: IRF7342PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 3.4A
Rds On (Maximum) at Id, Vgs: 105mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 25V

Buy Now
FET, MOSFET Arrays - IRF7342PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7342PBF
FET, MOSFET Arrays IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8-SOIC

MOSFET 2P-CH 55V 3.4A 8-SOIC

Supplier's Site Datasheet
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE - 70016988 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
70016988
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE 70016988
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE

-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7342PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7342PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8SO

MOSFET 2P-CH 55V 3.4A 8SO

Supplier's Site

Technical Specifications

  DigiKey Radwell International Win Source Electronics ODG (Origin Data Global) Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number IRF7342PBF-ND 17427198 1187231-IRF7342PBF IRF7342PBF 70016988 IRF7342PBF
Product Name FET, MOSFET Arrays Transistor FETs - Arrays - IRF7342PBF FET, MOSFET Arrays -55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3 8-SOIC (0.154", 3.90mm Width) SO-8
Polarity P-Channel; 2 P-Channel (Dual) P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 55 volts 55 volts -55 volts
QG 38 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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