IPZA60R037CM8 is a 600 V CoolMOS™ CM8 N-channel power MOSFET in a PG-TO247-4 package, designed for high-efficiency switching applications such as PFC stages, LLC resonant converters, and power supplies. It features a maximum on-resistance of 37 mΩ, a pulsed drain current of 230 A, and an avalanche energy rating of 135 mJ for single pulses. The device includes an integrated fast body diode with a maximum commutation speed of 1300 A/µs and supports high dv/dt ruggedness up to 120 V/ns. It is fully qualified according to JEDEC for industrial applications and operates with a junction temperature range from -55 °C to 175 °C.
IPZA60R037CM8 600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPZA60R037CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPZA60R037CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0370 ohms |
| QG | 79 nC |
