The IPTG054N15NM5 is an N-channel Silicon MOSFET designed for high-current, high-efficiency switching applications. It is packaged in a PG-HSOG-8 surface-mount package with dimensions of 9.70 to 10.10 mm in length and 11.50 to 11.90 mm in width. The device has a drain-source breakdown voltage of 150 V, a maximum on-state resistance of 5.4 mΩ, and a continuous drain current rating of 143 A. It is rated for a maximum junction temperature of 175 °C and has a thermal resistance from junction to case of 0.6 °C/W. The device is fully qualified according to JEDEC for industrial applications, is lead-free, RoHS compliant, and halogen-free according to IEC 61249-2-21. It is 100% avalanche-tested with single-pulse avalanche energy capability up to 211 mJ.
OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance
The OptiMOS™ power MOSFET IPTG054N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction. This new package in OptiMOS™ 5 150 V offers very low RDS(on) and is optimized to handle high current.
Thanks to the flexibility of gullwing leads, OptiMOS™ in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board (TCoB) compared to the standard requirements (IPC-9701).
Among the key benefits, TOLG ensures high efficiency, lower EMI as well as high power density.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPTG054N15NM5 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPTG054N15NM5 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0054 ohms |
| QG | 58 nC |
