Infineon Technologies AG Single FETs, MOSFETs IPTG111N20NM3FDATMA1

Description
Power Field-Effect Transistor
Request a Quote Datasheet
Description
Power Field-Effect Transistor
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
 - IPTG111N20NM3FDATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IPTG111N20NM3FDATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPTG111N20NM3FDATMA1CT-ND
Single FETs, MOSFETs 448-IPTG111N20NM3FDATMA1CT-ND
N-Channel 200V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1

N-Channel 200V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1

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Single FETs, MOSFETs - 448-IPTG111N20NM3FDATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
N-Channel 200V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1

N-Channel 200V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1

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Single FETs, MOSFETs - 448-IPTG111N20NM3FDATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPTG111N20NM3FDATMA1TR-ND
Single FETs, MOSFETs 448-IPTG111N20NM3FDATMA1TR-ND
N-Channel 200V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1

N-Channel 200V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278308-IPTG111N20NM3FDATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278308-IPTG111N20NM3FDATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278308-IPTG111N20NM3FDATMA1
Win Source Part Number: 1278308-IPTG111N20NM 3FDATMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ 3 Package: Tape & Reel Standard Package: 1,800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V Vgs(th) (Max) @ Id: 4V @ 267µA Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Package / Case: 8-PowerSMD, Gull Wing Supplier Device Package: PG-HSOG-8-1 Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 77 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP005431194,448-IPTG 111N20NM3FDATMA1DKR, 448-IPTG111N20NM3FDA TMA1CT,448-IPTG111N2 0NM3FDATMA1TR Base Product Number: IPTG111N Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278308-IPTG111N20NM3FDATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™ 3
Package: Tape & Reel
Standard Package: 1,800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Package / Case: 8-PowerSMD, Gull Wing
Supplier Device Package: PG-HSOG-8-1
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP005431194,448-IPTG111N20NM3FDATMA1DKR,448-IPTG111N20NM3FDATMA1CT,448-IPTG111N20NM3FDATMA1TR
Base Product Number: IPTG111N
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
MOSFETs - 2334388 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2334388
MOSFETs 2334388
Infineon IPTG111N20NM3FDATMA1

Infineon IPTG111N20NM3FDATMA1

Supplier's Site
MOSFETs - 2334389 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2334389
MOSFETs 2334389
Infineon IPTG111N20NM3FDATMA1

Infineon IPTG111N20NM3FDATMA1

Supplier's Site
MOSFETs - 2334389P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2334389P
MOSFETs 2334389P
Infineon IPTG111N20NM3FDATMA1

Infineon IPTG111N20NM3FDATMA1

Supplier's Site
100V MOSFET Transistor 278-IPTG111N20NM3FDATMA1
TRENCH >=100V PG-HSOG-8 Product overview: IPTG111N20NM3FDATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPTG111N20NM3FDA TMA1 can be used for catalog matching and distributor lookup.

TRENCH >=100V PG-HSOG-8 Product overview: IPTG111N20NM3FDATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPTG111N20NM3FDATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPTG111N20NM3FDATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPTG111N20NM3FDATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPTG111N20NM3FDATMA1
TRENCH >=100V PG-HSOG-8

TRENCH >=100V PG-HSOG-8

Supplier's Site
Mosfet, N-Ch, 200V, 108A, Hsog Rohs Compliant Infineon - 60AJ3896 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 108A, Hsog Rohs Compliant Infineon
60AJ3896
Mosfet, N-Ch, 200V, 108A, Hsog Rohs Compliant Infineon 60AJ3896
MOSFET, N-CH, 200V, 108A, HSOG ROHS COMPLIANT: YES

MOSFET, N-CH, 200V, 108A, HSOG ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Power MOSFET Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPTG111N20NM3FDATMA1 448-IPTG111N20NM3FDATMA1CT-ND 1278308-IPTG111N20NM3FDATMA1 2334388 278-IPTG111N20NM3FDATMA1 IPTG111N20NM3FDATMA1 60AJ3896
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs 100V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 200V, 108A, Hsog Rohs Compliant Infineon
Package Type PG-HSOG-8 8-PowerSMD, Gull Wing SOT3 HSOG Tape & Reel (TR) 8-PowerSMD, Gull Wing TO-3
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Polarity N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement
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