Infineon Technologies AG P-Channel Power MOSFET IRF5210

-100V Single P-Channel Power MOSFET in a TO-220 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Summary of Features

• Planar cell structure for wide SOA
• Optimized for broadest availability from distribution partners
• Product qualification according to JEDEC standard
• Silicon optimized for applications switching below <100kHz
• Industry standard through-hole power package
• High-current rating

Benefits

• Increased ruggedness
• Wide availability from distribution partners
• Industry standard qualification
• High performance in low frequency applications
• Standard pin-out allows for drop-in replacement
• High current capability

Applications

• Cordless power tools and outdoor power equipment

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MOSFET P-CH 100V 38A D2PAK Product overview: IRF5210 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 38A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF5210 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 090688-IRF5210
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 2780pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 38A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Application Field: Used in Audio, Industrial