Infineon Technologies AG Datasheets for Insulated Gate Bipolar Transistors (IGBT)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Insulated Gate Bipolar Transistors (IGBT): Learn more
| Product Name | Notes |
|---|---|
| 4500 V IHV, 400 A 130mm Diode IGBT module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5) - The best solution for your... | |
| 4500 V IHV, 800 A 130mm Diode IGBT module with Emitter Controlled C3 Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5) - The best solution for... | |
| 6500 V IHV 600 A 130mm diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. | |
| 6500 V IHV, 500 A 130mm Diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. | |
| 6500 V IHV, 750 A 130mm Diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. | |
| EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability... | |
| EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, solder pins contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage... | |
| Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore,... | |
| IHV 4500 V, 1200 A 130 mm Diode Module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5). Summary of Features High DC Stability... | |
| IHV B 3300 V, 1000 A 130 mm Diode Module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3... | |
| IHV B 3300 V, 1600 A 130 mm diode IGBT module with EC4 - Diode. The best solution for your transportation and industry applications and predestined to be combined with... | |
| IHV B 3300 V, 500 A 130 mm Diode Module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3... | |
| Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board... | |
| Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very... | |
| PrimePACK™3 1700 V , 1000 A chopper IGBT module with TRENCHSTOP™ IGBT4 and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Extended Operation Temperature Tvj op... | |
| The AIKQB120N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system... | |
| The AIKQB160N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system... | |
| The AIKQB200N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system... | |
| The AIKYX120N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30%... | |
| The AIKYX160N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30%... | |
| The AIKYX200N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30%... | |
| The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high... | |
| The automotive IGBT discrete AIKQ200N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high... | |
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Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW40N65DF5 -- AIKW40N65DF5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW40N65DH5 -- AIKW40N65DH5
|
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. Summary of Features 650V blocking voltage Max junction temperature 175°C... |
|
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5 -- AIGBE40N65F5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DF5 -- AIKB30N65DF5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DH5 -- AIKB30N65DH5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB40N65DF5 -- AIKB40N65DF5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB40N65DH5 -- AIKB40N65DH5
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World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V... |
| XHP™ 3 4500 V, 450 A diode IGBT module with Emitter Controlled E4 Diode and enhanced isolation of 10.4 kV. Predestined to be combined with IGBT module FF450R45T3E4_B5 Summary of... |
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