MOSFET N-CH 200V 12A TO220AB Product overview: IRF200B211 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF200B211 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor
Power Field-Effect Transistor
Manufacturer: Infineon Technologies
Win Source Part Number: 874996-IRF200B211
Series: HEXFET®, StrongIRFET™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 200 V 12A (Tc) 80W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IRF200
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 12A TO220AB
MOSFET, N-CH, 200V, 12A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | RS Components, Ltd. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF200B211 | IRF200B211 | 2579279P | 874996-IRF200B211 | IRF200B211-ND | IRF200B211 | IRF200B211 | 12AC9749 |
| Product Name | 200V 12A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF200B211 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 12A, To-220Ab; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 200 volts | |||||||
| Transconductance | 0.0130 kS | |||||||
| PD | 80 milliwatts |
