The IPT60R090CFD7 is a 600V CoolMOS™ CFD7 power MOSFET with an integrated ultra-fast body diode, designed for high-efficiency resonant topologies such as phase-shift full-bridge and LLC converters in server, telecom, and EV charging applications. It is packaged in a PG-HSOF-8 case and features a maximum on-state resistance of 90 mΩ, a gate charge of 42 nC, and a pulsed drain current of 79 A. The device supports a reverse diode di/dt of 1300 A/μs and is fully qualified according to JEDEC for industrial applications. It exhibits best-in-class RDS(on) × Qg and RDS(on) × Eoss figures of merit, along with improved hard commutation robustness.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT60R090CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0900 ohms |
| QG | 42 nC |
