MOSFET N-CH 100V 4.2A DIRECTFET Product overview: IRF6665TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6665TRPBF can be used for catalog matching and distributor lookup.
IRF6665 - 12V-300V N-Channel Power MOSFET
IRF6665 - 12V-300V N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 069326-IRF6665TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Family Name: IRF6665
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SH
Dimension: DirectFET Isometric SH
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.2A (Ta), 19A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 530pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 62 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): MSAFR38N10A; 2SK3443(TE24L); AON2290; 2SK3443;
Introduction Date: August 25, 2006
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH
MOSFET N-CH 100V 4.2A DIRECTFET
MOSFET 100V 1 x N-CH HEXFET for Digital Audio
MOSFET, N-CH, 100V, 19A, 150DEG C, 42W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF6665TRPBF | IRF6665TRPBF | 069326-IRF6665TRPBF | IRF6665TRPBFTR-ND | IRF6665TRPBF | IRF6665TRPBF | 91Y4745 |
| Product Name | 100V 4.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6665TRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 19A, 150Deg C, 42W; Channel Type Infineon | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 2200 milliwatts | 2200 to 42000 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
