Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7389TRPBF IRF7389TRPBF

IRF7389 - Automotive HEXFET P-Channel Power MOSFET

Manufacturer: Infineon Technologies
Win Source Part Number: 017518-IRF7389TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 650pF @ 25V
Maximum Rds On at Id,Vgs: 29 mOhm @ 5.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Mosfet Array N and P-Channel 30V 2.5W Surface Mount 8-SO

Mosfet Array N and P-Channel 30V 2.5W Surface Mount 8-SO

Mosfet Array N and P-Channel 30V 2.5W Surface Mount 8-SO

MOSFET N/P-CH 30V 8SO Product overview: IRF7389TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7389TRPBF can be used for catalog matching and distributor lookup.