The IPT60R055CFD7 is a 600V N-channel superjunction MOSFET with an integrated ultra-fast body diode, designed for high-efficiency resonant topologies such as phase-shift full-bridge and LLC converters in server, telecom, and EV charging applications. It is packaged in an PG-HSOF-8 surface-mount package measuring 10.28 to 10.58 mm in length, 9.70 to 10.10 mm in width, and 11.48 to 11.88 mm in height. The device has a maximum drain-source on-state resistance of 55 mΩ, a typical gate charge of 67 nC, and a pulsed drain current of 129 A. It supports a maximum junction temperature of 150°C and a thermal resistance from junction to case of 0.53 °C/W. The body diode exhibits a maximum reverse recovery current of 8.4 A and a di/dt ruggedness of 1300 A/μs. The device is fully qualified according to JEDEC for industrial applications.
Infineon’s answer to resonant high-power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse-recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT60R055CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R055CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0550 ohms |
| QG | 67 nC |
