Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R055CFD7 IPT60R055CFD7

Infineon’s answer to resonant high-power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse-recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) Designers who used this product also designed with 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1 2