Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R060CFD7 IPT65R060CFD7

Description
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R060CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650 V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications 1-phase string inverter solutions Smart speaker designs Designers who used this product also designed with IMT65R057M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes IPD023N04NF2S | N-Channel Power MOSFET BSC007N04LS6SC | N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IMT65R057M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes IPD023N04NF2S | N-Channel Power MOSFET BSC007N04LS6SC | N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET 1 2 3
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Description
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R060CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650 V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications 1-phase string inverter solutions Smart speaker designs Designers who used this product also designed with IMT65R057M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes IPD023N04NF2S | N-Channel Power MOSFET BSC007N04LS6SC | N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IMT65R057M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes IPD023N04NF2S | N-Channel Power MOSFET BSC007N04LS6SC | N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R060CFD7 - IPT65R060CFD7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R060CFD7
IPT65R060CFD7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R060CFD7 IPT65R060CFD7
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R060CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650 V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications 1-phase string inverter solutions Smart speaker designs Designers who used this product also designed with IMT65R057M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes IPD023N04NF2S | N-Channel Power MOSFET BSC007N04LS6SC | N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IMT65R057M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes IPD023N04NF2S | N-Channel Power MOSFET BSC007N04LS6SC | N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET 1 2 3

The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R060CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.


Summary of Features

  • Ultrafast body diode and very low Qrr
  • 650 V breakdown voltage
  • Significantly reduced switching losses compared to competition
  • Lowest RDS(on) dependency over temperature

Benefits

  • Excellent hard-commutation ruggedness
  • Extra safety margin for designs with increased bus voltage
  • Enabling increased power density
  • Outstanding light-load efficiency in industrial SMPS applications
  • Improved full-load efficiency in industrial SMPS applications
  • Price competitiveness compared to alternative offerings in the market

Potential Applications

  • Fast EV charging
  • Server power supply
  • Solutions for solar energy systems
  • Telecom infrastructure

Applications

  • 1-phase string inverter solutions
  • Smart speaker designs

Designers who used this product also designed with


  • IMT65R057M1H |
    Silicon Carbide MOSFET Discretes
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • IMZA65R048M1H |
    Silicon Carbide MOSFET Discretes
  • IPD023N04NF2S |
    N-Channel Power MOSFET
  • BSC007N04LS6SC |
    N-Channel Power MOSFET
  • 2N7002 |
    N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET
  • IMT65R057M1H |
    Silicon Carbide MOSFET Discretes
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • IMZA65R048M1H |
    Silicon Carbide MOSFET Discretes
  • IPD023N04NF2S |
    N-Channel Power MOSFET
  • BSC007N04LS6SC |
    N-Channel Power MOSFET
  • 2N7002 |
    N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • BSC160N15NS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT65R060CFD7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R060CFD7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0600 ohms
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