MOSFET N/P-CH 25V 3.5A/2.3A 8SO Product overview: IRF7105PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 3.5A, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 3.5A, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7105PBF can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 25V 3.5A, 2.3A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 126692-IRF7105PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 3.5A, 2.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 330pF @ 15V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 25V 3.5A/2.3A 8SO
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
MOSFET N/P-CH 25V 8-SOIC
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.5A I(D), 25V, 0.1OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP--8. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | ODG (Origin Data Global) | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-IRF7105PBF | IRF7105PBF-ND | 126692-IRF7105PBF | IRF7105PBF | 70016977 | IRF7105PBF | 17584981 |
| Product Name | 25V 3.5A 2.3A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE | FET, MOSFET Arrays | Transistor |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tube | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | SO-8 | 8-SOIC (0.154", 3.90mm Width) | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | ||||
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel |
