Manufacturer: Infineon Technologies
Win Source Part Number: 126692-IRF7105PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 3.5A, 2.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 330pF @ 15V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 25V 3.5A, 2.3A 2W Surface Mount 8-SO
MOSFET N/P-CH 25V 3.5A/2.3A 8SO Product overview: IRF7105PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 3.5A, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 3.5A, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7105PBF can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 25V 8-SOIC
MOSFET N/P-CH 25V 3.5A/2.3A 8SO
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.5A I(D), 25V, 0.1OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP--8. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | RF Transistors |
| Product Number | 126692-IRF7105PBF | IRF7105PBF-ND | 289-IRF7105PBF | IRF7105PBF | IRF7105PBF | 70016977 | 17584981 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105PBF | FET, MOSFET Arrays | 25V 3.5A 2.3A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE | Transistor |
| Polarity | P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel | ||||
| V(BR)DSS | 25 volts | 25 volts | |||||
| PD | 2000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
