Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105PBF IRF7105PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 126692-IRF7105PBF Packaging: Tube/Rail Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Standard Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 3.5A, 2.3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 330pF @ 15V Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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    Win Source Electronics
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  • Transistor - 17584981 - Radwell International
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  • 25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE - 70016977 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • FET, MOSFET Arrays - IRF7105PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 126692-IRF7105PBF Packaging: Tube/Rail Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Standard Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 3.5A, 2.3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 330pF @ 15V Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105PBF - 126692-IRF7105PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105PBF
126692-IRF7105PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105PBF 126692-IRF7105PBF
Manufacturer: Infineon Technologies Win Source Part Number: 126692-IRF7105PBF Packaging: Tube/Rail Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Standard Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 3.5A, 2.3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 330pF @ 15V Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 126692-IRF7105PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 3.5A, 2.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 330pF @ 15V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
25V 3.5A 2.3A MOSFET Transistor - 289-IRF7105PBF - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
25V 3.5A 2.3A MOSFET Transistor
289-IRF7105PBF
25V 3.5A 2.3A MOSFET Transistor 289-IRF7105PBF
MOSFET N/P-CH 25V 3.5A/2.3A 8SO Product overview: IRF7105PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 3.5A, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 3.5A, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7105PBF can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 25V 3.5A/2.3A 8SO Product overview: IRF7105PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 3.5A, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 3.5A, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7105PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - IRF7105PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7105PBF-ND
FET, MOSFET Arrays IRF7105PBF-ND
Mosfet Array N and P-Channel 25V 3.5A, 2.3A 2W Surface Mount 8-SO

Mosfet Array N and P-Channel 25V 3.5A, 2.3A 2W Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7105PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7105PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7105PBF
MOSFET N/P-CH 25V 3.5A/2.3A 8SO

MOSFET N/P-CH 25V 3.5A/2.3A 8SO

Supplier's Site
Transistor - 17584981 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
17584981
Transistor 17584981
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.5A I(D), 25V, 0.1OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP--8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.5A I(D), 25V, 0.1OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP--8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE - 70016977 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
70016977
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE 70016977
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE

25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE

Supplier's Site
FET, MOSFET Arrays - IRF7105PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7105PBF
FET, MOSFET Arrays IRF7105PBF
MOSFET N/P-CH 25V 8-SOIC

MOSFET N/P-CH 25V 8-SOIC

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Radwell International Allied Electronics, Inc. ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 126692-IRF7105PBF 289-IRF7105PBF IRF7105PBF-ND IRF7105PBF 17584981 70016977 IRF7105PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105PBF 25V 3.5A 2.3A MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor 25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE FET, MOSFET Arrays
Polarity P-Channel N-Channel; P-Channel P-Channel; N and P-Channel
V(BR)DSS 25 volts 25 volts
PD 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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