Power MOSFET Datasheets

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Search By Specification | Manufacturers and Distributors | Power MOSFET: Selection Guide

Power MOSFET Datasheets From:
Headquarters
Fuji Electric Corp. of America
United States
Infineon Technologies AG
Germany
Richardson RFPD
United States
Rochester Electronics
United States
ROHM Semiconductor GmbH
Germany
Texas Instruments
United States
Utmel Electronic Limited
China
Win Source Electronics
Hong Kong
Allied Electronics, Inc.
Fort Worth, TX
Integra Technologies, Inc.
El Segundo, CA
Karl Kruse GmbH & Co. KG
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
Solid State Devices, Inc.
La Mirada, CA
Twilight Technology Inc.
Anaheim, CA
Universal Semiconductor, Inc.
San Jose, CA