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Power MOSFET Datasheets

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Search By Specification | Manufacturers and Distributors | Power MOSFET: Selection Guide

Power MOSFET Datasheets From:
Headquarters
Fuji Electric Corp. of America
United States
Infineon Technologies AG
Germany
Richardson RFPD
United States
Rochester Electronics
United States
ROHM Semiconductor GmbH
Germany
Texas Instruments
United States
Win Source Electronics
Singapore
Allegro MicroSystems Inc.
United States
Nexperia B.V.
Netherlands
Allied Electronics, Inc.
Fort Worth, TX
Integra Technologies, Inc.
El Segundo, CA
Karl Kruse GmbH & Co. KG
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
Solid State Devices, Inc.
La Mirada, CA
Twilight Technology Inc.
Anaheim, CA
Universal Semiconductor, Inc.
San Jose, CA
Utmel Electronic Limited
China
Advanced Power Electronics Corp.
Taiwan
Central Semiconductor Corp.
United States
DIODES Incorporated
United States
Fuji Electric Global
Japan
IXYS Corporation
United States
Kexin Co., Ltd.
China
Microchip Technology, Inc.
United States
Microsemi Corp.
United States
NCEPOWER 
China
New Jersey Semi-Conductor Products, Inc.
Springfield, NJ
Newark, An Avnet Company
United States
NXP Semiconductors
United States
onsemi
United States
Panasonic
United States
Powerex, Inc.
United States
Semikron, Inc.
Hudson, NH
STMicroelectronics, Inc.
United States
STMicroelectronics
Switzerland
Texas Instruments High-Performance Analog
United States
Torex Semiconductor, Ltd.
Japan
Vishay Intertechnology, Inc.
United States
Wolfspeed
United States