Infineon Technologies AG Single FETs, MOSFETs IRF6216TRPBF

HEXFET Power MOSFET

HEXFET Power MOSFET

MOSFET P-CH 150V 2.2A 8SO

MOSFET P-CH 150V 2.2A 8SO Product overview: IRF6216TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6216TRPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 017447-IRF6216TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: IRF6216
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1280pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.3A, 10V
Alternative Parts (Cross-Reference): Si4455DY-T1-GE3; Si4455DY-T1-E3; IRF6216TR;
Introduction Date: June 06, 2005
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO