Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPZ65R019C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes
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Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes
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Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPZ65R019C7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPZ65R019C7
500V-950V N-Channel Power MOSFET IPZ65R019C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDWD40G120C5 | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • DIN rail power supplies
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IDWD40G120C5 |
    CoolSiC™ Schottky Diodes
  • IMZ120R030M1H |
    Silicon Carbide MOSFET Discretes
  • IDWD40G120C5 |
    CoolSiC™ Schottky Diodes
  • IMZ120R030M1H |
    Silicon Carbide MOSFET Discretes
  • IDWD40G120C5 |
    CoolSiC™ Schottky Diodes
  • IMZ120R030M1H |
    Silicon Carbide MOSFET Discretes
Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 700V 75A TO247-4

MOSFET N-Ch 700V 75A TO247-4

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Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPZ65R019C7 IPZ65R019C7
Product Name 500V-950V N-Channel Power MOSFET MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0190 ohms
QG 215 nC
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