Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRLPBF IRF3710ZSTRLPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017426-IRF3710ZSTRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017426-IRF3710ZSTRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRLPBF - 017426-IRF3710ZSTRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRLPBF
017426-IRF3710ZSTRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRLPBF 017426-IRF3710ZSTRLPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017426-IRF3710ZSTRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 017426-IRF3710ZSTRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
 - IRF3710ZSTRLPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Supplier's Site Datasheet
 - IRF3710ZSTRLPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Supplier's Site Datasheet
Singapore
100V 59A MOSFET Transistor
278-IRF3710ZSTRLPBF
100V 59A MOSFET Transistor 278-IRF3710ZSTRLPBF
MOSFET N-CH 100V 59A D2PAK Product overview: IRF3710ZSTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 59A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 59A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3710ZSTRLPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 59A D2PAK Product overview: IRF3710ZSTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 59A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 59A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3710ZSTRLPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF3710ZSTRLPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3710ZSTRLPBFCT-ND
Single FETs, MOSFETs IRF3710ZSTRLPBFCT-ND
N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRF3710ZSTRLPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3710ZSTRLPBFDKR-ND
Single FETs, MOSFETs IRF3710ZSTRLPBFDKR-ND
N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRF3710ZSTRLPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3710ZSTRLPBFTR-ND
Single FETs, MOSFETs IRF3710ZSTRLPBFTR-ND
N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
MOSFETs - 1623302 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1623302
MOSFETs 1623302
MOSFET N-Ch 100V 59A HEXFET TO-262

MOSFET N-Ch 100V 59A HEXFET TO-262

Supplier's Site
MOSFETs - 1623302P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1623302P
MOSFETs 1623302P
MOSFET N-Ch 100V 59A HEXFET TO-262

MOSFET N-Ch 100V 59A HEXFET TO-262

Supplier's Site
MOSFETs - 1623273 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1623273
MOSFETs 1623273
MOSFET N-Ch 100V 59A HEXFET TO-262

MOSFET N-Ch 100V 59A HEXFET TO-262

Supplier's Site
Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W; Channel Type Infineon - 32AC7469 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W; Channel Type Infineon
32AC7469
Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W; Channel Type Infineon 32AC7469
MOSFET, N-CH, 100V, 59A, 175DEG C, 160W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 59A, 175DEG C, 160W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3710ZSTRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3710ZSTRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3710ZSTRLPBF
MOSFET N-CH 100V 59A D2PAK

MOSFET N-CH 100V 59A D2PAK

Supplier's Site
Single FETs, MOSFETs - IRF3710ZSTRLPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF3710ZSTRLPBF
Single FETs, MOSFETs IRF3710ZSTRLPBF
MOSFET N-CH 100V 59A D2PAK

MOSFET N-CH 100V 59A D2PAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 100V 59A 18mOhm 82nC Qg

MOSFET MOSFT 100V 59A 18mOhm 82nC Qg

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017426-IRF3710ZSTRLPBF IRF3710ZSTRLPBF 278-IRF3710ZSTRLPBF IRF3710ZSTRLPBFCT-ND 1623302 1623302P 32AC7469 IRF3710ZSTRLPBF IRF3710ZSTRLPBF IRF3710ZSTRLPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRLPBF 100V 59A MOSFET Transistor Single FETs, MOSFETs MOSFETs MOSFETs Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 160000 milliwatts 160 milliwatts 160000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK D2PAK Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2pak TO-263; TO-263 TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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