Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPZ60R060C7

Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Telecommunication infrastructure Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulato r) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs. EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPZ60R060C7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Telecommunication infrastructure Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulato r) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs. EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The IPZ60R060C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency power conversion in PFC and LLC topologies. It is packaged in a PG-TO-247-4 case with a four-pin Kelvin source configuration to enhance switching performance. The device has a maximum continuous drain current of 54 A at T<sub>j</sub> < 150°C and a maximum pulsed drain current of 135 A. It features a maximum R<sub>DS(on)</sub> of 60 mΩ, a gate charge of 68 nC, and an output capacitance energy of 8.1 µJ at 400 V. The MOSFET exhibits high dv/dt ruggedness up to 120 V/ns and a reverse diode di/dt of 400 A/µs. It is qualified for industrial-grade applications per JEDEC J-STD-20 and JESD22, and uses Pb-free plating with a halogen-free mold compound. Thermal resistance from junction to case is 0.772 °C/W.

Datasheet Summary
Powered by GS/AI

The IPZ60R060C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency power conversion in PFC and LLC topologies. It is packaged in a PG-TO-247-4 case with a four-pin Kelvin source configuration to enhance switching performance. The device has a maximum continuous drain current of 54 A at T<sub>j</sub> < 150°C and a maximum pulsed drain current of 135 A. It features a maximum R<sub>DS(on)</sub> of 60 mΩ, a gate charge of 68 nC, and an output capacitance energy of 8.1 µJ at 400 V. The MOSFET exhibits high dv/dt ruggedness up to 120 V/ns and a reverse diode di/dt of 400 A/µs. It is qualified for industrial-grade applications per JEDEC J-STD-20 and JESD22, and uses Pb-free plating with a halogen-free mold compound. Thermal resistance from junction to case is 0.772 °C/W.

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500V-950V N-Channel Power MOSFET - IPZ60R060C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPZ60R060C7
500V-950V N-Channel Power MOSFET IPZ60R060C7
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Telecommunication infrastructure Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulato r) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs. EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 1 2

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.


Summary of Features

  • Reduced switching loss parameters such as Q G, C oss, E oss
  • Best-in-class figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the world
  • Rugged body diode

Benefits

  • Enables increasing switching frequency without loss in efficiency
  • Measure showing key parameter for light load and full load efficiency
  • Doubling the switching frequency will half the size of magnetic components
  • Smaller packages for same R DS(on)
  • Can be used in many more positions for both hard and soft switching topologies

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Industrial
  • USB-PD

Applications

  • 48 V intermediate bus converter (IBC)
  • Telecommunication infrastructure

Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulator) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs.


EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPZ60R060C7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0600 ohms
QG 68 nC
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