IPTC025N15NM6 is an N-channel power MOSFET rated for 150 V drain-source voltage with a maximum on-state resistance of 2.5 mΩ and a continuous drain current of 264 A at 25 °C. It is housed in an PG-HDSOP-16 package measuring 15.20 mm x 10.30 mm with a tab for drain connection. The device is 100% avalanche tested with single-pulse avalanche energy of 960 mJ and meets JEDEC industrial qualification standards. It is RoHS compliant and halogen-free per IEC 61249-2-21, with MSL 1 moisture sensitivity rating. Thermal resistance from junction to case is 0.38 °C/W. Gate charge total is 105 nC and reverse recovery charge is 184 nC at 500 A/μs di/dt.
OptiMOS™ 6 power MOSFET 150 V normal level in TOLT package for top-side cooling
IPTC025N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Combined with TOLT package, it enables top-side cooling for superior thermal performance, dissipating up to 95% of the heat through the heatsink and away from the PCB.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPTC025N15NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPTC025N15NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0025 ohms |
