Infineon Technologies AG Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Product Name Notes
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFP640 Summary of Features: - High gain low noise RF transistor - Provides outstanding performance for a wide range of wireless applications - Ideal for CDMA and WLAN applications - Outstanding...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP620F Summary of Features: - High gain low noise RF transistor - Small package 1.4 x 0.8 x 0.59 mm - Outstanding noise figure F = 0.7 dB at 1.8 GHz...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP740
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP740F
Summary of Features: - High gain ultra low noise RF transistor - Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more - Ideal...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP620 Summary of Features: - Highly linear low noise RF transistor - Provides outstanding performance for a wide range of wireless applications - Based on Infineon's reliable high volume SiGe:C technology...
Low-Noise Si Transistors up to 2.5 GHz -- BFS17W
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFS17S
Target Applications: - Wireless Communications - For amplifier and oscillator applications in RF Front-end
Active Bias Controllers for RF Transistor -- BCR410W
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BCR400W
Active Bias Controller for various applications like cellular and cordless phones, DECT, WLAN, PHS and RF modems. The controllers are stabilizing the bias current for NPN transistors and FET’s Summary...
RF & Wireless Control, RF Transistor, RF MOSFET, Dual Semi Biased -- BG3130R
RF & Wireless Control> RF & Wireless Control> RF Transistor> RF MOSFET -- BG3130
DUAL N-Channel MOSFET Tetrode Summary of Features: - Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) - Two AGC amplifiers in one single package -...
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features: - Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz - Output compression point...
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP760 High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz
RF Power, Cellular (700 MHz to 1000 MHz) -- PTVA082407NF V1 High Power LDMOS FET, 240 W, 48 V, 746 - 821 MHz Summary of Features: - Broadband internal input matching - Typical CW performance, 755 MHz, 48 V - Output...
RF Power, Cellular (2300 MHz to 2700 MHz) -- GTVA263202FC V1 High Power RF GaN HEMT, 340 W, 48 V, 2620 – 2690 MHz Summary of Features: - GaN HEMT technology - Input matched - Typical Pulsed CW performance, 2690 MHz,...
RF & Wireless Control> RF & Wireless Control> RF Power -- GTVA101K42EV V1 High Power RF GaN-SiC HEMT, 1400W, 50V, 960 - 1215MHz Summary of Features: - GaN-SiC HEMT technology - Input matched - Typical Pulsed CW performance, 960 to 1215MHz, 50V, single...
RF Power, Cellular (2300 MHz to 2700 MHz) -- GTVA261701FA V1 R0 High Power RF GaN-SiC HEMT, 170 W, 50 V, 2620 – 2690 MHz Summary of Features: - Input Matched - Typical Pulsed CW performance, 2690 MHz, 48 V, single side...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- GTVA104001FA V1 High Power RF GaN-SiC HEMT, 400 W, 50 V, 960-1215 MHz Summary of Features: - GaN-SiC HEMT technology - Broadband internal input matching - Typical Pulsed CW performance, 960 -...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- GTVA126001EC V1 High Power RF GaN-SiC HEMT, 600W, 50V, 1200MHz to 1400MHz Summary of Features: - GaN-SiC HEMT technology - Input matched - Typical pulsed CW performance (class AB), 1200 to 1400...
RF Power, Cellular (2000 MHz to 2200 MHz) -- GTVA220701FA V1 R0 High Power RF GaN-SiC HEMT, 70 W, 50 V, 1805 – 2170 MHz Summary of Features: - Input matched - Typical CW performance, 1880 MHz, 48 V - Output power...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- GTVA107001EC V1 High Power RF GaN-SiC HEMT, 700 W, 50 V, 960-1215 MHz Summary of Features: - GaN-SiC HEMT technology - Input matched - Typical pulsed CW performance (class AB), 960 to...
RF & Wireless Control> RF & Wireless Control> RF Power -- PXAC261002FC V1 High Power RF LDMOS FET 100W, 28V, 2496-2690MHz Summary of Features: - Broadband internal input and output matching - Asymmetric Doherty design - Main: P1dB = 40 W Typ -...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PXAC261212FC V1 High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Summary of Features: - Broadband internal matching - Asymmetric design - Main = 50 W P1dB -...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXFC211507SC V1 R250 High Power RF LDMOS FET 150W, 28V, 2110 – 2170MHz Summary of Features: - • Broadband internal input and output matching • Typical Pulsed CW performance, 2170 MHz, 28 V,...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFB092707FH V1 High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Summary of Features: - Broadband internal input and output matching - Typical pulsed CW performance (10 μs...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTFC260362SC V1 R250 High Power RF LDMOS FET 32 W, 28 V, 2496 – 2690 MHz Summary of Features: - Input matching - Typical pulsed CW performance, 2690 MHz, 28 V (10 µs...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTAC240502FC V1 High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Summary of Features: - Input matched - Asymmetric Doherty design - Main: 17 W Typ P1dB -...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA120501EA V1 High Power RF LDMOS FET 50 W, 50 V, 1200–1400 MHz Summary of Features: - Broadband input matching - High gain and efficiency - Integrated ESD protection - Low thermal...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFB090901EA V2
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFB090901FA V2
High Power RF LDMOS FET 90 W, 28 V, 920 – 960 MHz Summary of Features: - Input and output internal matching - Typical CW performance, 960 MHz, 28 V,...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA101K02EV V1 High Power RF LDMOS FET, 1000 W, 50 V, 1030 / 1090 MHz Summary of Features: - Broadband input matching - High gain and efficiency - Integrated ESD protection -...
RF Power, General Purpose Transistors (700 MHz to 2700 MHz) -- PTFC270101M V1 R1K High Power RF LDMOS FET, 10W, 28V, 900 – 2700MHz Summary of Features: - Unmatched input and output - Typical CW performance, 2170 MHz, 28 V - Output power @...
RF Power, General Purpose Transistors (700 MHz to 2700 MHz) -- PTFA220121M V4 R1K High Power RF LDMOS FET, 12 W, 28 V, 700 - 2200 MHz Summary of Features: - • Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - P...
RF & Wireless Control> RF & Wireless Control> RF Power -- PTVA030121EA V1 High Power RF LDMOS FET, 12 W, 50 V, 390 – 450 MHz Summary of Features: - Unmatched input and output - Integrated ESD protection - High gain, low thermal...
RF Power, General Purpose Transistors (700 MHz to 2700 MHz) -- PTVA120121M V1 High Power RF LDMOS FET, 12 W, 50 V, 500 – 1400 MHz Summary of Features: - Unmatched - Target pulsed CW performance at 821 MHz, 48 V - Output...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFA091201E V4 High Power RF LDMOS FET, 120 W, 28 V, 920 – 960 MHz Summary of Features: - Broadband internal matching - Typical EDGE performance, - Average output power = 50...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAC201602FC V1 High Power RF LDMOS FET, 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Summary of Features: - Asymmetric Doherty design - Main: 55 W Typ (P1dB)...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB201402FC V1 High Power RF LDMOS FET, 140 W, 28 V, 2010 – 2025 MHz Summary of Features: - Broadband internal matching - Typical CW performance, 28 V, single side - Output...
RF & Wireless Control> RF & Wireless Control> RF Power -- PTFC261402FC V1 High Power RF LDMOS FET, 140 W, 28 V, 2620 – 2690 MHz Summary of Features: - Broadband internal matching - Wide video bandwidth - Typical pulsed CW performance, 2655...
RF & Wireless Control> RF & Wireless Control> RF Power -- PTFB241402F V1 High Power RF LDMOS FET, 140 W, 30 V, 2300 – 2400 MHz Summary of Features: - Broadband internal matching - Typical CW performance, single side - Output power (1dB...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PXFC191507FC V1 High Power RF LDMOS FET, 150 W, 28 V, 1805 – 1990 MHz Summary of Features: - Broadband internal input and output matching - Typical Pulsed CW performance, 1990 MHz,...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB211503EL V1
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB211503FL V2
High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz Summary of Features: - Broadband internal matching - Enhanced for use in DPD error correction systems -...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB211501E V1 High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz Summary of Features: - Broadband internal matching - Typical single-carrier WCDMA performance at 2170 MHz, 30 V,...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFB091507FH V1 High Power RF LDMOS FET, 160 W, 28 V, 920 – 960 MHz Summary of Features: - Broadband internal matching - Wide video bandwidth - Typical CW performance, 960 MHz,...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFB181702FC V1 High Power RF LDMOS FET, 170 W, 28V, 1805 – 1880 MHz Summary of Features: - Broadband input and output matching - Typical CW performance at 1842 MHz, 28 V...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFA211801E V5 High Power RF LDMOS FET, 180 W, 28 V, 2110 – 2170 MHz Summary of Features: - Broadband internal matching - Typical two-carrier WCDMA performance at 2140 MHz, 28 V...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFB091802FC V1 High Power RF LDMOS FET, 180W, 28V, 920 - 960MHz Summary of Features: - Broadband internal input and output matching - Dual path design (2 X 90 W) - Typical...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTAB182002FC V1 High Power RF LDMOS FET, 190 W, 28 V, 1805 – 1880 MHz Summary of Features: - Asymmetric Doherty Design - Main: P1dB = 70 W Typ - Peak: P1dB...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTFC262157FH V1 High Power RF LDMOS FET, 200 W, 28 V, 2620 – 2690 MHz Designed for Doherty, optimized for peak side Summary of Features: - Wide video bandwidth - Typical single-carrier...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA102001EA V1 R0 High Power RF LDMOS FET, 200W, 50V, 960 - 1400 MHz Summary of Features: - Input matched - Capable of handling 10:1 VSWR @50 V, 200 W (CW) output power...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTRA094252FC V1 High Power RF LDMOS FET, 208 W, 48 V, 746 – 960 MHz Summary of Features: - Broadband internal input matching - Asymmetrical Doherty design - Main : P 1dB...
RF & Wireless Control> RF & Wireless Control> RF Power -- PXFC192207NF V1 R500 High Power RF LDMOS FET, 220 W, 28 V, 1805 – 1990 MHz Summary of Features: - Broadband internal input and output matching - Typical Pulsed CW performance, 1880 MHz,...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PXFC192207SH V1 R250 High Power RF LDMOS FET, 220 W, 28 V, 1805 – 1990MHz Summary of Features: - Broadband internal input and output matching - Typical Pulsed CW performance, 1880 MHz, 28...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PXFC192207FH V3 High Power RF LDMOS FET, 220 W, 28 V, 1805-1990 MHz Summary of Features: - Broadband input and output matching - Typical Pulsed CW performance, 1990 MHz, 28 V, 16...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFA092201E V4 High Power RF LDMOS FET, 220 W, 30 V, 920 – 960 MHz Summary of Features: - Broadband internal matching - Typical two-carrier WCDMA performance at 960 MHz, 30 V...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFB182503EL V1 High Power RF LDMOS FET, 240 W, 1805 – 1880 MHz Summary of Features: - Broadband input and output matching - Enhanced for use in DPD error correction systems -...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFB182503FL V2 High Power RF LDMOS FET, 240 W, 1805 – 1880 MHz Summary of Features: - Broadband internal input and output matching - Enhanced for use in DPD error correction systems...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB212503EL V1
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB212503FL V2
High Power RF LDMOS FET, 240 W, 2110 – 2170 MHz Summary of Features: - Broadband internal input and output matching - Enhanced for use in DPD error correction systems...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PXAC182908FV V1 R0 High Power RF LDMOS FET, 240 W, 28 V, 1805-1880 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical Doherty design - Main: P1dB = 120...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXFC212551SC V1 R250 High Power RF LDMOS FET, 240 W, 28 V, 2110 – 2170 MHz Summary of Features: - Broadband internal input and output matching - Typical Pulsed CW performance, 2140 MHz,...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFB192503EL V1
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFB192503FL V2
High Power RF LDMOS FET, 240 W, 30 V, 1930 – 1990 MHz Summary of Features: - Broadband input and output matching - Enhanced for use in DPD error correction...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTVA092407NF V1 High Power RF LDMOS FET, 240 W, 48 V, 869 - 960 MHz Summary of Features: - Broadband internal input matching - Typical CW performance, 925 MHz, 48 V -...
RF & Wireless Control> RF & Wireless Control> RF Power -- PTFA072401FL V5 High Power RF LDMOS FET, 240W, 30V, 725 – 770MHz Summary of Features: - Broadband internal matching - Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTFC260202FC V1 High Power RF LDMOS FET, 25 W, 28 V, 2495 – 2690 MHz Summary of Features: - Broadband input matching - Typical CW performance, 2620 MHz, 28 V - Output...
RF Power, General Purpose Transistors (700 MHz to 2700 MHz) -- PTVA120252MT V1 High Power RF LDMOS FET, 25 W, 48 V, 500 – 1400 MHz Summary of Features: - Unmatched - Target CW performance 960 MHz, 48 V, combined outputs - Output...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA120251EA V2 High Power RF LDMOS FET, 25 W, 50 V, 500 – 1400 MHz Summary of Features: - Unmatched input and output - High gain and efficiency - Integrated ESD protection...
RF Power, UHF Broadcast (470 MHz to 806 MHz) -- PTVA042502EC V1 R0 High Power RF LDMOS FET, 250W, 50V, 470 - 806 MHz Summary of Features: - Input matched - Integrated ESD protection - Low thermal resistance - RoHS compliant - Capable...
RF Power, UHF Broadcast (470 MHz to 806 MHz) -- PTVA042502FC V1 High Power RF LDMOS FET, 250W, 50V, 470-806 MHz Summary of Features: - Input matched - Integrated ESD protection - Low thermal resistance - RoHS compliant - Capable of withstanding...
RF & Wireless Control> RF & Wireless Control> RF Power -- PTFB072707FH V1 High Power RF LDMOS FET, 270 W, 28 V, 728 – 768 MHz Summary of Features: - Broadband internal matching - Wide video bandwidth - Typical pulsed performance, 768 MHz,...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTRA083818NF V1 High Power RF LDMOS FET, 275 W, 48 V, 733 - 805 MHz Summary of Features: - Broadband internal input matching - Asymmetrical Doherty design - Main : P 1dB...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFC210202FC V1 High Power RF LDMOS FET, 28 W, 28 V, 1800 – 2200 MHz Summary of Features: - Input matched - Typical CW performance, 2170 MHz, 28 V, combined output -...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTFC262808SV V1 R250 High Power RF LDMOS FET, 280 W, 28 V, 2620 – 2690 MHz Summary of Features: - Broadband internal matching - Low thermal resistance - Typical CW pulsed performance, 2620...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTFC262808FV V1 High Power RF LDMOS FET, 280 W, 28 V, 2620 – 2690 MHz Summary of Features: - Broadband internal matching - Wide video bandwidth - Typical CW pulsed performance, 2655...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTRA082808NF V1 High Power RF LDMOS FET, 280 W, 48 V, 790 – 820 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical design - Main : P...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTAC260302FC V1 High Power RF LDMOS FET, 30 W, 28 V, 2620 – 2690 MHz Summary of Features: - Asymmetrical design - Broadband internal matching - Typical CW performance, 2690 MHz, 28...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTAC260302SC V1 R250 High Power RF LDMOS FET, 30 W, 28 V, 2620 – 2690 MHz Summary of Features: - Asymmetrical design - Input matching - Wide video bandwidth - Typical CW performance,...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB213004F V2 High Power RF LDMOS FET, 300 W, 30 V, 2110 – 2170 MHz Summary of Features: - Broadband internal matching - Enhanced for use in DPD error correction systems -...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTVA093002ND V1 High Power RF LDMOS FET, 300 W, 50V, 703 - 960 MHz Summary of Features: - Input matching - CW performance (combined output) 870 MHz, 48 V - Output power...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTFB213208FV V2 High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2170 MHz Summary of Features: - Broadband internal matching - Wide video bandwidth - Typical pulsed CW performance, 2140...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAC213308FV V1 High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2200 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical Doherty design - Main :...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTRA093302FC V1 High Power RF LDMOS FET, 330 W, 50 V, 746 – 768 MHz Summary of Features: - Input matched - Asymmetric Doherty design - Main: P 1dB = 150 W...
RF & Wireless Control> RF & Wireless Control> RF Power -- PXAC203302FV V1 R250 High Power RF LDMOS FET, 330W, 28V, 1880 – 2025 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical Doherty design - Main : P1dB =...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFB193404F V1 High Power RF LDMOS FET, 340 W, 30 V, 1930 – 1990 MHz Summary of Features: - Broadband input and output matching - Wide video bandwidth - Typical single-carrier WCDMA...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA123501EC V2
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA123501FC V1
High Power RF LDMOS FET, 350 W, 50 V, 1200 – 1400 MHz Summary of Features: - Broadband internal input and output matching - High gain and efficiency - Integrated...
RF Power, UHF Broadcast (470 MHz to 806 MHz) -- PTVA043502EC V1 High Power RF LDMOS FET, 350 W, 50 V, 470 – 860 MHz Summary of Features: - Input matched - Integrated ESD protection - Low thermal resistance - High gain...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PXAC243502FV V1 High Power RF LDMOS FET, 350W, 28V, 2300 – 2400 MHz Summary of Features: - Asymmetric design - Main: 150W P1dB - Peak: 200W P1dB - Broadband internal matching -...
RF Power, UHF Broadcast (470 MHz to 806 MHz) -- PTVA043502FC V1 High Power RF LDMOS FET, 350W, 50V, 470-860 MHz Summary of Features: - Input matched - Integrated ESD protection - Low thermal resistance - High gain - Capable of handling...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFB093608FV V3
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFB093608SV V2 R250
High Power RF LDMOS FET, 360 W, 28 V, 920 – 960 MHz Summary of Features: - Broadband internal matching - Enhanced for use in DPD error correction systems and...
RF Power, General Purpose Transistors (700 MHz to 2700 MHz) -- PTFA220041M V4 High Power RF LDMOS FET, 4 W, 700 – 2200 MHz Summary of Features: - Typical two-carrier WCDMA performance at 1842 MHz, 8 dB PAR, POUT = 27 dBm Avg,...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTRA093818NF V1 High Power RF LDMOS FET, 415 W, 48 V, 925 - 960 MHz Summary of Features: - Broadband internal input matching - Asymmetrical design - Main : P 1dB =...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PXAD184218FV V1 High Power RF LDMOS FET, 420 W, 28 V, 1805-1880 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical Doherty design - Main: P 1dB =...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAD214218FV V1 High Power RF LDMOS FET, 430W, 28V, 2110-2170MHz Summary of Features: - • Broadband internal input and output matching • Asymmetrical Doherty design - Main : P 1dB = 130...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA104501EH V1 High Power RF LDMOS FET, 450 W, 50 V, 960 – 1215 MHz Summary of Features: - Broadband input and output matching - High gain and efficiency - Integrated ESD...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTRA094808NF V1 High Power RF LDMOS FET, 480 W, 48 V, 859 - 960 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical design - Main : P...
RF Power, General Purpose Transistors (700 MHz to 2700 MHz) -- PTFC270051M V2 R1K High Power RF LDMOS FET, 5 W, 28 V, 900 – 2700 MHz Summary of Features: - Unmatched - Typical CW performance, 940 MHz, 28 V - Output power (P1dB)...
RF Power, UHF & L Band (400 MHz to 1400 MHz) -- PTVA035002EV V1 High Power RF LDMOS FET, 500 W, 50 V, 390 – 450 MHz Summary of Features: - Unmatched input and output - High gain and effi ciency - Integrated ESD...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAC210552FC V1 High Power RF LDMOS FET, 55 W, 28 V, 1805 – 2170 MHz Summary of Features: - Broadband internal matching - Asymmetric Doherty design - Main : P 1dB =...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAC210552MD V1 High Power RF LDMOS FET, 55 W, 28 V, 1805 - 2170 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical Doherty design - Main :...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAC210552ND V1 High Power RF LDMOS FET, 55 W, 28 V, 1805 - 2170 MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical Doherty Design - Main: P...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFA080551F V4 High Power RF LDMOS FET, 55W, 28V, 869 – 960MHz Summary of Features: - Broadband internal matching - Typical EDGE performance - Average output power = 26 W - Gain...
RF Power, Cellular (700 MHz to 1000 MHz) -- PTFA080551E V4 High Power RF LDMOS FET, 55W, 869 - 960MHz Summary of Features: - Broadband internal matching - Typical EDGE performance - Average output power = 26 W - Gain =...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PXAC180602MD V1 R500 High Power RF LDMOS FET, 60 W, 28 V, 1805 – 1880 MHz Summary of Features: - Broadband internal input and output matching - Asymmetric Doherty design - Main: P1dB...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PXAC260602FC V1 High Power RF LDMOS FET, 60W, P3dB @ 28V, 2620-2690MHz Summary of Features: - Main: Input matched Peak: Input and output matching - Asymmetric Doherty design - Main: P1dB =...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFA180701E V4 High Power RF LDMOS FET, 70 W, 28 V, 1805 – 1880 MHz Summary of Features: - Broadband input and output matching - Typical EDGE performance - Average output power...
RF Power, UHF Broadcast (470 MHz to 806 MHz) -- PTVA047002EV V1 R0 High Power RF LDMOS FET, 700W, 50V, 470 - 806 MHz Summary of Features: - Integrated ESD protection - Low thermal resistance - High gain - Thermally enhanced package -...
RF Power, General Purpose Transistors (700 MHz to 2700 MHz) -- PTFA220081M V4 High Power RF LDMOS FET, 8 W, 700 – 2200 MHz Summary of Features: - Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PTAC210802FC V1 High Power RF LDMOS FET, 80 W, 28 V, 2110 – 2170 MHz Summary of Features: - Asymmetrical design - Main : P1dB = 19 W Typ - Peak :...
RF & Wireless Control> RF & Wireless Control> RF Power -- PTFB210801FA V1 High Power RF LDMOS FET, 80 W, 28 V, 2110 – 2170 MHz Summary of Features: - Broadband internal matching - Typical single-carrier WCDMA performance at 2170 MHz, 28 V...
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAC200902FC V1 High Power RF LDMOS FET, 90 W, 28 V, 1805 – 2170 MHz Summary of Features: - Broadband internal input and output matching - Asymmetric Doherty design - Main: P...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PTFB183404E V1 High Power RF LDMOS FETs, 340 W, 30 V, 1805 – 1880 MHz Summary of Features: - Broadband input and output matching - Wide video bandwidth - Typical single-carrier WCDMA...
RF & Wireless Control> RF & Wireless Control> RF Power -- PTVA127002EV V1 R0 High RF Power LDMOS FET, 700W, 50V, 1200-1400MHz Summary of Features: - Broadband input and output matching - High gain and efficiency - Integrated ESD protection - Low thermal resistance...
Low-Noise Si Transistors up to 5 GHz -- BFP420F Low Noise Silicon Bipolar RF Transistor Summary of Features: - Low noise high gain silicon bipolar RF transistor - Based on Infineon´s reliable very high volume 25 GHz silicon bipolar...
Low-Noise Si Transistors up to 2.5 GHz -- BFP 183 E7764 Low-Noise Si Transistors up to 2.5 GHz
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP650F NPN Silicon Germanium RF Transistor Summary of Features: - For medium power amplifiers and driver stages - High OIP3 and P-1dB - Ideal for low phase noise oscilators - Maxim.
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP640F NPN Silicon Germanium RF Transistor Summary of Features: - High gain low noise RF transistor - Provides outstanding performance for a wide range of wireless applications - Ideal for CDMA...
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP196WN NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFS17P NPN Silicon RF Transistor for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA Summary of Features: - For broadband amplifiers up to 1...
Low-Noise Si Transistors up to 2.5 GHz -- BFR92P NPN Silicon RF Transistor for broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Summary of Features: - For broadband...
Low-Noise Si Transistors up to 5 GHz -- BFP540ESD NPN Silicon RF Transistor for ESD protected high gain low noise amplifier Summary of Features: - Excellent ESD performance typical value 1000 V (HBM) - Outstanding Gms = 21.5 dB...
Low-Noise Si Transistors up to 5 GHz -- BFP540FESD NPN Silicon RF Transistor for ESD protected high gain low noise amplifier Summary of Features: - Excellent ESD performance typical value 1000 V (HBM) Outstanding Gms = 20 dB Noise...
Low-Noise Si Transistors up to 5 GHz -- BFP420 NPN Silicon RF Transistor for high gain low noise amplifiers Summary of Features: - For high gain low noise amplifiers - For oscillators up to 10 GHz - Noise figure...
Low-Noise Si Transistors up to 5 GHz -- BFP540 NPN Silicon RF Transistor for highest gain low noise amplifier at 1.8 GHz Summary of Features: - Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB - Gold...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFP405 NPN Silicon RF Transistor for low current applications Summary of Features: - For oscillators up to 12 GHz - Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms...
Low-Noise Si Transistors up to 5 GHz -- BFP410 NPN Silicon RF Transistor for low current applications Summary of Features: - Low current device suitable e.g. for handhelds - For high frequency oscillators e.g. DRO for LNB - For...
Low-Noise Si Transistors up to 5 GHz -- BFP405F NPN Silicon RF Transistor for low current applications Summary of Features: - Smallest Package 1.4 x 0.8 x 0.59 mm - Noise figure F = 1.25 dB at 1.8 GHz...
Low-Noise Si Transistors up to 2.5 GHz -- BFR35AP NPN Silicon RF Transistor for low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Summary of Features: - For low distortion broadband...
Low-Noise Si Transistors up to 2.5 GHz -- BFP181
Low-Noise Si Transistors up to 2.5 GHz -- BFS481
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFR181
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFR181W
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Summary of Features: - For low noise, high-gain broadband amplifiers at...
Low-Noise Si Transistors up to 2.5 GHz -- BFP182W NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 m Summary of Features: - For low noise, high-gain broadband amplifiers at...
Low-Noise Si Transistors up to 2.5 GHz -- BFP182R
Low-Noise Si Transistors up to 2.5 GHz -- BFR182W
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFR182
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA Summary of Features: - For low noise, high-gain broadband amplifiers at...
Low-Noise Si Transistors up to 2.5 GHz -- BFP183W
Low-Noise Si Transistors up to 2.5 GHz -- BFR183
Low-Noise Si Transistors up to 2.5 GHz -- BFS483
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Summary of Features: - For low noise, high-gain broadband amplifiers at...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFR460L3 NPN Silicon RF Transistor for low voltage / low current applications Summary of Features: - Ideal for VCO modules and low noise amplifiers - Low noise figure: 1.1 dB at...
Low-Noise Si Transistors up to 5 GHz -- BFP520F NPN Silicon RF Transistor Summary of Features: - For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFR93AW NPN Silicon RF Transistor Summary of Features: - For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA - Pb-free (RoHS...
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP193
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP193W
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFR193
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFR193F
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFR193L3
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFR193W
NPN Silicon RF Transistor Summary of Features: - For low noise, high-gain amplifiers up to 2 GHz - For linear broadband amplifiers - fT = 8 GHz, NFmin = 1...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFQ19S NPN Silicon RF Transistor Summary of Features: - For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA...
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP196
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP196W
NPN Silicon RF Transistor Summary of Features: - For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA...
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFP450
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFR93A
NPN Silicon RF Transistor Summary of Features: - For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA - Pb-free (RoHS compliant) package Target Applications:...
Low-Noise Si Transistors up to 2.5 GHz -- BFR340F NPN Silicon RF Transistor Summary of Features: - General purpose Low Noise Amplifier - Ideal for low current operation - High breakdown voltage enables operation in automotive applications - Minimum...
Low-Noise Si Transistors up to 5 GHz -- BFP460 NPN Silicon RF Transistor Summary of Features: - General purpose low noise amplifier for low voltage, low current applications - High ESD robustness, typical 1500V (HBM) - Low minimum noise...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFR380L3 NPN Silicon RF Transistor Summary of Features: - High current capability and low noise figure for wide dynamic range - Low voltage operation - Ideal for low phase noise oscillators...
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz -- BFR380F NPN Silicon RF Transistor Summary of Features: - High linearity low noise driver amplifier - Output compression point 19.5 dBm @ 1.8 GHz - Ideal for oscillators up to 3.5...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFR106 NPN Silicon RF Transistor Summary of Features: - High linearity low noise RF transistor - 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA -...
Low-Noise Si Transistors up to 5 GHz -- BFP520 NPN Silicon RF Transistor Summary of Features: - Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with...
Low-Noise Si Transistors up to 2.5 GHz -- BFR360F NPN Silicon RF Transistor Summary of Features: - Low noise amplifier for low current applications - Collector design supports 5V supply voltage - For oscillators up to 3.5 GHz -...
Low-Noise Si Transistors up to 2.5 GHz -- BFR360L3 NPN Silicon RF Transistor Summary of Features: - Low voltage/ Low current operation - For low noise amplifiers - For Oscillators up to 3.5 GHz and Pout > 10 dBm...
Low-Noise Si Transistors up to 2.5 GHz -- BFR340L3 NPN Silicon RF Transistor Summary of Features: - Low voltage/ Low current operation - Transition frequency of 14 GHz - High insertion gain - Ideal for low current amplifiers and...
RF & Wireless Control> RF & Wireless Control> RF Transistor> RF MOSFET -- BF2040W RF & Wireless Control> RF & Wireless Control> RF Transistor> RF MOSFET
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP843
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFR843EL3
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Summary of Features: - Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology - High maximum...
RF & Wireless Control, RF Transistor, RF MOSFET, Single Semi Biased -- BF5030W Silicon N-Channel MOSFET Tetrode Summary of Features: - Designed for input stages of UHF- and VHF-tuners with AGC function - Supporting 5 V operations and power saving 3 V operations...
RF & Wireless Control, RF Transistor, RF MOSFET, Single Semi Biased -- BF2040 Silicon N-Channel MOSFET Tetrode Summary of Features: - For low noise , high gain controlled input stages up to 1GHz - Operating voltage 5 V - Pb-free (RoHS compliant) package...
RF & Wireless Control, RF Transistor, RF MOSFET, Single Non Biased -- BF999 Silicon N-Channel MOSFET Triode Summary of Features: - For high-frequency stages up to 300 MHz preferably in FM applications - Pb-free (RoHS compliant) package - Qualified according AEC Q101 Target...
RF & Wireless Control, RF Transistor, RF MOSFET, Single Non Biased -- BF998 Silicon N-Channel MOSFET Triode Summary of Features: - Short-channel transistor with high S / C quality factor - For low-noise, gain-controlled input stage up to 1 GHz - Pb-free (RoHS...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP640ESD The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP640FESD The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP720 The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP720ESD The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP720F The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with lowest...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP720FESD The BFP720FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP740ESD The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP740FESD The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device...
Medium Power Amplifiers -- BFP780 The BFP780 is a single stage driver amplifier with high linearity and high power gain. Its output 1dB compression point is 23 dBm. The chip is housed in a halogen-free...
RF & Wireless Control> RF & Wireless Control> RF Transistor -- BFP840FESD The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP842ESD The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP843F The BFP843F is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board (e.g. AppNote...
Medium Power Amplifiers -- BFQ790 The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFR740L3RH The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides...
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFR840L3RHESD The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.
Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz -- BFP840ESD The BFx840xESD product family is a series of discrete hetero-junction bipolar transistors (HBT) specifically designed for high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity applications.
RF Power, Cellular (2000 MHz to 2200 MHz) -- PXAC201202FC V2 Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Summary of Features: - Asymmetric Doherty design: - Main = 35 W Typ (P1dB) - Peak...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PXAC241702FC V1 Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Summary of Features: - Asymmetrical Doherty design - Main: P1dB = 60 W Typ - Peak:...
RF Power, Cellular (1800 MHz to 1995 MHz) -- PXAC182002FC V1 Thermally-Enhanced High Power RF LDMOS FET, 180 W, 28 V, 1805 – 1880 MHz Summary of Features: - Broadband internal input and output matching - Typical pulsed CW performance, 1880...
RF Power, Cellular (2300 MHz to 2700 MHz) -- PTFC262157SH V1 R250 Thermally-Enhanced High Power RF LDMOS FET, 200 W, 28 V, 2620 – 2690 MHz Designed for Doherty, optimized for peak side Summary of Features: - Broadband internal matching - Wide...
RF & Wireless Control> RF & Wireless Control> RF Power -- PXAC192908FV V1 Thermally-Enhanced High Power RF LDMOS FET, 240 W, 28 V, 1930 – 1995 MHz Summary of Features: - Broadband internal input and output matching - Asymmetric Doherty design - Main:...
RF & Wireless Control> RF & Wireless Control> RF Power -- PXAC260622SC V1 R250 Thermally-Enhanced High Power RF LDMOS FET, 75W, 28V, 2496 - 2690MHz Summary of Features: - Broadband internal input and output matching - Asymmetrical Doherty design - Main: 25 W Typ...