Infineon Technologies AG P-Channel Power MOSFET IRF5210S

Description
-100V Single P-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Designers who used this product also designed with BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET
  • P-Channel Power MOSFET - IRF5210S - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
-100V Single P-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Designers who used this product also designed with BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

P-Channel power MOSFET in a D2-Pak package with a -100 V drain-to-source breakdown voltage, continuous drain current of -38 A at 25°C, and a maximum on-resistance of 60 mΩ at -10 V gate-source voltage. The device operates at junction temperatures up to 150°C, supports repetitive avalanche energy up to 17 mJ, and has a thermal resistance from junction to case of 0.75 °C/W. It meets RoHS standards and is qualified for industrial use.

Datasheet Summary
Powered by GS/AI

P-Channel power MOSFET in a D2-Pak package with a -100 V drain-to-source breakdown voltage, continuous drain current of -38 A at 25°C, and a maximum on-resistance of 60 mΩ at -10 V gate-source voltage. The device operates at junction temperatures up to 150°C, supports repetitive avalanche energy up to 17 mJ, and has a thermal resistance from junction to case of 0.75 °C/W. It meets RoHS standards and is qualified for industrial use.

Suppliers

Company
Product
Description
Supplier Links
P-Channel Power MOSFET - IRF5210S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
IRF5210S
P-Channel Power MOSFET IRF5210S
-100V Single P-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Designers who used this product also designed with BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET BSC072N08NS5 | N-Channel Power MOSFET BSS306N | Small signal/small power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET

-100V Single P-Channel IR MOSFET in a D2-Pak package


Benefits

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

Designers who used this product also designed with


  • BSC072N08NS5 |
    N-Channel Power MOSFET
  • BSS306N |
    Small signal/small power MOSFET
  • BSC123N08NS3 G |
    N-Channel Power MOSFET
  • BSZ110N08NS5 |
    N-Channel Power MOSFET
  • BSC072N08NS5 |
    N-Channel Power MOSFET
  • BSS306N |
    Small signal/small power MOSFET
  • BSC123N08NS3 G |
    N-Channel Power MOSFET
  • BSZ110N08NS5 |
    N-Channel Power MOSFET
  • BSC072N08NS5 |
    N-Channel Power MOSFET
  • BSS306N |
    Small signal/small power MOSFET
  • BSC123N08NS3 G |
    N-Channel Power MOSFET
  • BSZ110N08NS5 |
    N-Channel Power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF5210S
Product Name P-Channel Power MOSFET
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 0.0600 ohms
Unlock Full Specs
to access all available technical data