N-Channel 200V 90A (Tc) 417W (Tc) Surface Mount PG-TO263-3
Manufacturer: Infineon Technologies
Win Source Part Number: 874999-IRF200S234
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 200 V 90A (Tc) 417W (Tc) Surface Mount PG-TO263-3
Package: Reel - TR
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: Surface Mount
Family Name: IRF200
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IRF200S234DKR, SP001593688, IRF200S234TR, IRF200S234CT, IRF200S234-ND
IRF200S - 12V-300V N-Channel Power MOSFET
IRF200S - 12V-300V N-Channel Power MOSFET
MOSFET N-CH 200V 90A D2PAK Product overview: IRF200S234 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF200S234 can be used for catalog matching and distributor lookup.
200V 90A 417W 16.9mΩ@10V,51A 5V@250uA N Channel TO-263-3 MOSFETs ROHS
MOSFET N-CH 200V 90A D2PAK
MOSFET N-CH 200V 90A D2PAK
| DigiKey | Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF200S234TR-ND | 874999-IRF200S234 | IRF200S234 | 278-IRF200S234 | IRF200S234 | IRF200S234 | IRF200S234 | IRF200S234 | 376-IRF200S234 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF200S234 | 200V 90A MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | TRENCH_MOSFETS | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; PG-TO263-3 | D2PAK | Tape & Reel (TR) | TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE |
