Infineon Technologies AG Single FETs, MOSFETs IRF6215S

Description
MOSFET P-CH 150V 13A D2PAK
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Description
MOSFET P-CH 150V 13A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF6215S - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6215S
Single FETs, MOSFETs IRF6215S
MOSFET P-CH 150V 13A D2PAK

MOSFET P-CH 150V 13A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6215S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6215S-ND
Single FETs, MOSFETs IRF6215S-ND
P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK

P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK

Buy Now Datasheet
FETs - Single - IRF6215S - 1187088-IRF6215S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF6215S
1187088-IRF6215S
FETs - Single - IRF6215S 1187088-IRF6215S
Manufacturer: Infineon Technologies Win Source Part Number: 1187088-IRF6215S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Family Name: IRF6215 Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.8W, 110W Alternative Parts (Cross-Reference): AUIRF6215S; IXTA15P15T; S20VSJ-3; FS20VSJ-3-A1; Introduction Date: April 22, 2005 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 13A Rds On (Maximum) at Id, Vgs: 290mOhm at 6.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 860pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187088-IRF6215S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Family Name: IRF6215
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.8W, 110W
Alternative Parts (Cross-Reference): AUIRF6215S; IXTA15P15T; S20VSJ-3; FS20VSJ-3-A1;
Introduction Date: April 22, 2005
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 13A
Rds On (Maximum) at Id, Vgs: 290mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 860pF at 25V

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRF6215S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRF6215S
Integrated Circuits (ICs) - Transistors - MOSFETs IRF6215S
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors
Product Number IRF6215S IRF6215S-ND 1187088-IRF6215S IRF6215S
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - IRF6215S Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts 150 volts
IDSS 13000 milliamps
PD 3800 milliwatts 3800 to 110000 milliwatts
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