Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
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Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW60R190P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190P6 can be used for catalog matching and distributor lookup.
MOSFET NChannel 650V 20.2A CoolMOS TO247
MOSFET NChannel 650V 20.2A CoolMOS TO247
MOSFET NChannel 650V 20.2A CoolMOS TO247
Manufacturer: Infineon Technologies
Win Source Part Number: 1186477-IPW60R190P6
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
600V 20.2A 190mΩ@7.6A,10V 151W 4.5V@630uA 1 N-Channel TO-247-3 MOSFETs ROHS
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW60R190P6 | 278-IPW60R190P6 | 1109099P | 1109099 | 1186477-IPW60R190P6 | IPW60R190P6 | IPW60R190P6 |
| Product Name | 500V-950V N-Channel Power MOSFET | 600V 20.2A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R190P6 | Transistors | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel | ||||
| Transistor Technology / Material | Si/SiC | ||||||
| rDS(on) | 0.1900 ohms | ||||||
| QG | 37 nC | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |