The IPW60R190P6 is a 600V CoolMOS™ P6 superjunction MOSFET designed for high-efficiency switching applications such as PFC, PWM, and resonant converters. It is packaged in a PG-TO-247 case with a maximum drain-source breakdown voltage of 650V, a typical on-state resistance of 190 mΩ, and a pulsed drain current of 57 A. The device features low switching and conduction losses, high dv/dt ruggedness up to 100 V/ns, and a gate charge of 37 nC. It meets JEDEC J-STD-020 and JESD22 industrial grade qualifications, with Pb-free plating and halogen-free mold compound. The maximum operating junction temperature is 150°C, and the thermal resistance from junction to case is 0.83 °C/W.
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Summary of Features
Benefits
Potential Applications
Designers who used this product also designed with
Manufacturer: Infineon Technologies
Win Source Part Number: 1186477-IPW60R190P6
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW60R190P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190P6 can be used for catalog matching and distributor lookup.
MOSFET NChannel 650V 20.2A CoolMOS TO247
MOSFET NChannel 650V 20.2A CoolMOS TO247
MOSFET NChannel 650V 20.2A CoolMOS TO247
600V 20.2A 190mΩ@7.6A,10V 151W 4.5V@630uA 1 N-Channel TO-247-3 MOSFETs ROHS
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IPW60R190P6 | 1186477-IPW60R190P6 | 278-IPW60R190P6 | 1109099P | 1109099 | IPW60R190P6 | IPW60R190P6 |
| Product Name | 500V-950V N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R190P6 | 600V 20.2A MOSFET Transistor | MOSFETs | MOSFETs | MOSFET | Transistors |
| Polarity | N-Channel; N | N-Channel | N-Channel | ||||
| Transistor Technology / Material | Si/SiC | ||||||
| rDS(on) | 0.1900 ohms | ||||||
| QG | 37 nC | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
