The IPW60R055CM8 is a 600 V CoolMOS™ CM8 N-channel power MOSFET in a PG-TO247-3 package, designed for high-efficiency switching applications such as data center power supplies, EV charging, and industrial inverters. It features a maximum drain-source on-state resistance of 55 mΩ, a pulsed drain current of 148 A, and an integrated fast body diode with a maximum diode commutation speed of 1300 A/μs. The device supports an extended operating junction temperature up to 175 °C for short durations and meets JEDEC industrial qualification standards. Its thermal resistance from junction to case is 0.55 K/W, and it includes ESD protection with an HBM class of 2.
600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPW60R055CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPW60R055CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0550 ohms |
