Infineon Technologies AG FETs - Single - IRF7410PBF IRF7410PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187264-IRF7410PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Alternative Parts (Cross-Reference): SI4463CDY-T1-GE3; Si4477DY-T1-GE3; Si4477DY; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 7mOhm at 16A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA Gate Charge (Qg) (Maximum) at Vgs: 91nC at 4.5V Gate Source Voltage (Maximum): ±8V Input Capacitance (Ciss) (Maximum) at Vds: 8676pF at 10V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187264-IRF7410PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Alternative Parts (Cross-Reference): SI4463CDY-T1-GE3; Si4477DY-T1-GE3; Si4477DY; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 7mOhm at 16A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA Gate Charge (Qg) (Maximum) at Vgs: 91nC at 4.5V Gate Source Voltage (Maximum): ±8V Input Capacitance (Ciss) (Maximum) at Vds: 8676pF at 10V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF7410PBF - 1187264-IRF7410PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF7410PBF
1187264-IRF7410PBF
FETs - Single - IRF7410PBF 1187264-IRF7410PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187264-IRF7410PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Alternative Parts (Cross-Reference): SI4463CDY-T1-GE3; Si4477DY-T1-GE3; Si4477DY; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 7mOhm at 16A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA Gate Charge (Qg) (Maximum) at Vgs: 91nC at 4.5V Gate Source Voltage (Maximum): ±8V Input Capacitance (Ciss) (Maximum) at Vds: 8676pF at 10V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187264-IRF7410PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Alternative Parts (Cross-Reference): SI4463CDY-T1-GE3; Si4477DY-T1-GE3; Si4477DY;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 16A
Rds On (Maximum) at Id, Vgs: 7mOhm at 16A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 91nC at 4.5V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 8676pF at 10V

Buy Now
Single FETs, MOSFETs - IRF7410PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7410PBF-ND
Single FETs, MOSFETs IRF7410PBF-ND
P-Channel 12V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 12V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
12V 16A MOSFET Transistor - 278-IRF7410PBF - ERSAELECTRONICS PTE. LTD.
Singapore
12V 16A MOSFET Transistor
278-IRF7410PBF
12V 16A MOSFET Transistor 278-IRF7410PBF
MOSFET P-CH 12V 16A 8SO Product overview: IRF7410PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7410PBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 16A 8SO Product overview: IRF7410PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7410PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF7410PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF7410PBF
Single FETs, MOSFETs IRF7410PBF
MOSFET P-CH 12V 16A 8SO

MOSFET P-CH 12V 16A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7410PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7410PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7410PBF
MOSFET P-CH 12V 16A 8SO

MOSFET P-CH 12V 16A 8SO

Supplier's Site
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V - 70017583 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V
70017583
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V 70017583
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V

MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187264-IRF7410PBF IRF7410PBF-ND 278-IRF7410PBF IRF7410PBF IRF7410PBF 70017583
Product Name FETs - Single - IRF7410PBF Single FETs, MOSFETs 12V 16A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 12 volts 12 volts -12 volts
QG 91 nC
PD 2500 milliwatts 2500 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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