Manufacturer: Infineon Technologies
Win Source Part Number: 1187264-IRF7410PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Alternative Parts (Cross-Reference): SI4463CDY-T1-GE3; Si4477DY-T1-GE3; Si4477DY;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 16A
Rds On (Maximum) at Id, Vgs: 7mOhm at 16A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 91nC at 4.5V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 8676pF at 10V
MOSFET P-CH 12V 16A 8SO
P-Channel 12V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 12V 16A 8SO Product overview: IRF7410PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7410PBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 12V 16A 8SO
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1187264-IRF7410PBF | IRF7410PBF | IRF7410PBF-ND | 278-IRF7410PBF | IRF7410PBF | 70017583 |
| Product Name | FETs - Single - IRF7410PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | 12V 16A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 12 volts | 12 volts | -12 volts | |||
| QG | 91 nC | |||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |