Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW65R019C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EV charging On-board charging (OBC) for electric vehicles Designers who used this product also designed with 1EDB7275F | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET IMBG65R057M1H | Silicon Carbide MOSFET Discretes IMBG65R022M1H | Silicon Carbide MOSFET Discretes ICE2QR2280G | CoolSET™ Quasi Resonant 1EDB7275F | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET IMBG65R057M1H | Silicon Carbide MOSFET Discretes IMBG65R022M1H | Silicon Carbide MOSFET Discretes ICE2QR2280G | CoolSET™ Quasi Resonant 1 2
  • 500V-950V N-Channel Power MOSFET - IPW65R019C7 - Infineon Technologies AG
    Infineon Technologies AG
  • MOSFETs - 8977624P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 8977624 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1248812 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IPW65R019C7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R019C7 - 1186478-IPW65R019C7 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EV charging On-board charging (OBC) for electric vehicles Designers who used this product also designed with 1EDB7275F | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET IMBG65R057M1H | Silicon Carbide MOSFET Discretes IMBG65R022M1H | Silicon Carbide MOSFET Discretes ICE2QR2280G | CoolSET™ Quasi Resonant 1EDB7275F | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET IMBG65R057M1H | Silicon Carbide MOSFET Discretes IMBG65R022M1H | Silicon Carbide MOSFET Discretes ICE2QR2280G | CoolSET™ Quasi Resonant 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW65R019C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW65R019C7
500V-950V N-Channel Power MOSFET IPW65R019C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EV charging On-board charging (OBC) for electric vehicles Designers who used this product also designed with 1EDB7275F | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET IMBG65R057M1H | Silicon Carbide MOSFET Discretes IMBG65R022M1H | Silicon Carbide MOSFET Discretes ICE2QR2280G | CoolSET™ Quasi Resonant 1EDB7275F | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET IMBG65R057M1H | Silicon Carbide MOSFET Discretes IMBG65R022M1H | Silicon Carbide MOSFET Discretes ICE2QR2280G | CoolSET™ Quasi Resonant 1 2

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • EV charging
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • 1EDB7275F |
    Gate driver ICs
  • 1ED3124MU12F |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • BSC012N06NS |
    N-Channel Power MOSFET
  • IMBG65R057M1H |
    Silicon Carbide MOSFET Discretes
  • IMBG65R022M1H |
    Silicon Carbide MOSFET Discretes
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • 1EDB7275F |
    Gate driver ICs
  • 1ED3124MU12F |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • BSC012N06NS |
    N-Channel Power MOSFET
  • IMBG65R057M1H |
    Silicon Carbide MOSFET Discretes
  • IMBG65R022M1H |
    Silicon Carbide MOSFET Discretes
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant

1
2

Supplier's Site Datasheet
MOSFETs - 8977624P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8977624P
MOSFETs 8977624P
MOSFET N-Channel 700V 75A CoolMOS TO247

MOSFET N-Channel 700V 75A CoolMOS TO247

Supplier's Site
MOSFETs - 8977624 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8977624
MOSFETs 8977624
MOSFET N-Channel 700V 75A CoolMOS TO247

MOSFET N-Channel 700V 75A CoolMOS TO247

Supplier's Site
MOSFETs - 1248812 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1248812
MOSFETs 1248812
MOSFET N-Channel 700V 75A CoolMOS TO247

MOSFET N-Channel 700V 75A CoolMOS TO247

Supplier's Site
Single FETs, MOSFETs - IPW65R019C7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPW65R019C7
Single FETs, MOSFETs IPW65R019C7
75A, 650V, 0.019OHM, N-CHANNEL M

75A, 650V, 0.019OHM, N-CHANNEL M

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R019C7 - 1186478-IPW65R019C7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R019C7
1186478-IPW65R019C7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R019C7 1186478-IPW65R019C7
Manufacturer: Infineon Technologies Win Source Part Number: 1186478-IPW65R019C7 Family Name: IPW65R019C7 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STY139N65M5; STW78N65M5; APT94N65B2C3G; Introduction Date: April 18, 2013 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186478-IPW65R019C7
Family Name: IPW65R019C7
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STY139N65M5; STW78N65M5; APT94N65B2C3G;
Introduction Date: April 18, 2013
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPW65R019C7
MOSFET IPW65R019C7
MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7

MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW65R019C7 8977624P 8977624 IPW65R019C7 1186478-IPW65R019C7 IPW65R019C7
Product Name 500V-950V N-Channel Power MOSFET MOSFETs MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R019C7 MOSFET
Polarity N-Channel; N N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.0190 ohms
QG 215 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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