Infineon Technologies AG Single FETs, MOSFETs IRF3808STRRPBF

HEXFET Power MOSFET

N-Channel 75V 106A (Tc) 200W (Tc) Surface Mount D2PAK

Manufacturer: Infineon Technologies
Win Source Part Number: 040682-IRF3808STRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 106A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 5310pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 82A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

MOSFET N-CH 75V 106A D2PAK Product overview: IRF3808STRRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 106A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 106A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3808STRRPBF can be used for catalog matching and distributor lookup.