100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Benefits
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
Designers who used this product also designed with
IRLR3110Z | N-Channel Power MOSFET
IR2109S | Gate driver ICs
IRLR3110Z | N-Channel Power MOSFET
IR2109S | Gate driver ICs
IRLR3110Z | N-Channel Power MOSFET
IR2109S | Gate driver ICs
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Benefits
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard surface-mount power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
Designers who used this product also designed with
- IRLR3110Z |
N-Channel Power MOSFET
- IR2109S |
Gate driver ICs
- IRLR3110Z |
N-Channel Power MOSFET
- IR2109S |
Gate driver ICs
- IRLR3110Z |
N-Channel Power MOSFET
- IR2109S |
Gate driver ICs
