The IPW65R025CM8 is a 650 V silicon superjunction MOSFET designed for high-efficiency switching applications such as PFC stages and LLC resonant converters. It is packaged in a PG-TO247-3 case with dimensions of 20.80 to 21.10 mm in length, 15.70 to 16.13 mm in width, and 5.44 mm lead pitch. The device features a maximum drain-source on-state resistance of 25 mΩ, a pulsed drain current of 359 A, and an integrated fast body diode with a reverse recovery time of up to 187 ns. It has extended junction temperature operation up to 175 °C for up to 50 hours per application lifetime and meets JEDEC standards for industrial applications. The device includes ESD protection rated at HBM Class 2 and utilizes .XT interconnection technology for improved thermal performance.
650 V CoolMOS™ 8 power transistor
The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7.
It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPW65R025CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPW65R025CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0250 ohms |
| QG | 124 nC |
