IPTC017N10NM5LF2 is a 100 V N-channel MOSFET for hot-swap, battery protection, and e-fuse applications, packaged in a PG-HDSOP-16 case measuring 9.70 to 10.10 mm by 14.80 to 15.20 mm. It has a maximum drain-source on-state resistance of 1.7 mΩ at 150 A and 10 V gate-source voltage, and a continuous drain current of 321 A at 25 °C. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 775 mJ, operates from -55 °C to 175 °C, and is RoHS compliant and halogen-free per IEC 61249-2-21.
OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.7 mΩ, 351 A in TOLT package
IPTC017N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the TO-Leaded top-side package. Offering the industry’s lowest RDS(on) and wide SOA at 25˚C.
With the combination of OptiMOS™ 5 Linear FET 2 technology and TOLT package, the IPTC017N10NM5LF2 is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery management systems (BMS).
Summary of Features
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Complementary products
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPTC017N10NM5LF2 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPTC017N10NM5LF2 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0017 ohms |
