Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPZ60R017C7

Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Traction Uninterruptible power supplies (UPS)
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Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Traction Uninterruptible power supplies (UPS)
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Datasheet
Datasheet Summary
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The IPZ60R017C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency power conversion in PFC and LLC topologies, featuring a 4-pin Kelvin source configuration in a PG-TO-247-4 package. It offers a maximum drain-source on-state resistance of 17 mΩ at 25°C, continuous drain current of 129 A at junction temperature up to 150°C, and pulsed drain current capability of 495 A. The device supports a dv/dt ruggedness of 120 V/ns and has a gate charge total of 240 nC. It meets industrial-grade reliability requirements per JEDEC J-STD-20 and JESD22 standards. The body diode features a reverse recovery charge of 18 µC and peak reverse current of 55 A under specified conditions. The package is halogen-free with Pb-free plating.

Datasheet Summary
Powered by GS/AI

The IPZ60R017C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency power conversion in PFC and LLC topologies, featuring a 4-pin Kelvin source configuration in a PG-TO-247-4 package. It offers a maximum drain-source on-state resistance of 17 mΩ at 25°C, continuous drain current of 129 A at junction temperature up to 150°C, and pulsed drain current capability of 495 A. The device supports a dv/dt ruggedness of 120 V/ns and has a gate charge total of 240 nC. It meets industrial-grade reliability requirements per JEDEC J-STD-20 and JESD22 standards. The body diode features a reverse recovery charge of 18 µC and peak reverse current of 55 A under specified conditions. The package is halogen-free with Pb-free plating.

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500V-950V N-Channel Power MOSFET - IPZ60R017C7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPZ60R017C7
500V-950V N-Channel Power MOSFET IPZ60R017C7
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Traction Uninterruptible power supplies (UPS)

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.


Summary of Features

  • Reduced switching loss parameters such as Q G, C oss, E oss
  • Best-in-class figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the world
  • Rugged body diode

Benefits

  • Enables increasing switching frequency without loss in efficiency
  • Measure showing key parameter for light load and full load efficiency
  • Doubling the switching frequency will half the size of magnetic components
  • Smaller packages for same R DS(on)
  • Can be used in many more positions for both hard and soft switching topologies

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Industrial
  • USB-PD

Applications

  • 48 V intermediate bus converter (IBC)
  • Traction
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPZ60R017C7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0170 ohms
QG 240 nC
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