MOSFET 2N-CH 50V 3A 8SO Product overview: IRF7103TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7103TRPBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 50V 3A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 50V 3A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 50V 3A 2W Surface Mount 8-SO
IRF7103 - 12V-300V N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 017483-IRF7103TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Family Name: IRF7103
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 290pF @ 25V
Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): NDS9955; Si9955DY_NL; NDS9955_L86Z;
Introduction Date: August 25, 1997
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 50V 3A 8SO
DUAL N CHANNEL MOSFET, 50V, 3A; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.11ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Product Range:- RoHS Compliant: Yes
MOSFET 2N-CH 50V 3A 8-SOIC
Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8
50V 3A 2W 130mΩ@10V,3A 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 50V, 0.13OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET 2N-CH 50V 3A 8-SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | Radwell International | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-IRF7103TRPBF | IRF7103PBFDKR-ND | IRF7103TRPBF | 017483-IRF7103TRPBF | 8312865P | 1688757 | IRF7103TRPBF | 19K8221 | IRF7103TRPBF | IRF7103TRPBF | 70017405 | IRF7103TRPBF | 66777082 | 376-IRF7103TRPBF |
| Product Name | 50V 3A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7103TRPBF | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 50V, 3A; Transistor Polarity Infineon | FET, MOSFET Arrays | MOSFET | Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8 | Triode/MOS Tube/Transistor >> MOSFETs | Transistor | MOSFET 2N-CH 50V 3A 8-SOIC | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||||||
| V(BR)DSS | 50 volts | 50 volts | 50 volts | 50 volts | 50 volts | |||||||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
