IPU95R750P7 is a 950 V N-channel MOSFET designed for high-voltage switch-mode power supplies in applications such as LED lighting, low-power chargers, smart meters, and industrial power systems. It is packaged in a PG-TO251-3 case with dimensions specified as 5.97-6.22 mm in length, 6.35-6.73 mm in width, and 15.74-17.24 mm in height. The device has a maximum continuous drain current of 9.5 A at 150 °C, a drain-source on-state resistance of 0.75 Ω, and a gate threshold voltage of 3 V with a variation of ±0.5 V. It features integrated ESD protection rated at Class 2 (HBM), an avalanche energy rating of 18 mJ for single pulses, and an operating junction temperature range of -55 °C to 150 °C. The product is fully qualified according to JEDEC standards for industrial applications.
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.
Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPU95R750P7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.7500 ohms |
| QG | 23 nC |
