MOSFET N-CH 55V 75A TO220AB Product overview: IRF2805PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2805PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 069254-IRF2805PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Family Name: IRF2805
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 5110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 104A, 10V
Alternative Parts (Cross-Reference): BUK9506-55B; BUK7506-55B,127; BUK654R6-55C; BUK7506-55B;
Introduction Date: July 01, 2004
ECCN: EAR99
Country of Origin: China, Malaysia, Mexico, Philippines, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
IRF2805 - 12V-300V N-Channel Power MOSFET
IRF2805 - 12V-300V N-Channel Power MOSFET
N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-220AB
MOSFET N-Ch 55V 75A HEXFET TO220AB
MOSFET N-Ch 55V 75A HEXFET TO220AB
MOSFET N-Ch 55V 75A HEXFET TO220AB
MOSFET, N-CH, 55V, 175A, 175DEG C, 330W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:175A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET MOSFT 55V 175A 4.7mOhm 150nC
MOSFET N-CH 55V 75A TO220AB
MOSFET, N-CH, 55V, 175A, 175DEG C, 330W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:55V; CONTINUOUS DRAIN CURRENT ID:175A; ON RESISTANCE RDS(ON):0.0047OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
IRF2805 - 12V-300V N-CHANNEL POW
MOSFET N-CH 55V 75A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Allied Electronics, Inc. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF2805PBF | 069254-IRF2805PBF | IRF2805PBF | IRF2805PBF-ND | 9128687 | 7840274P | 38K2761 | IRF2805PBF | IRF2805PBF | 66776750 | 70016947 | IRF2805PBF |
| Product Name | 55V 75A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2805PBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet, N-Ch, 55V, 175A, 175Deg C, 330W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | ||||||||
| Transconductance | 0.0910 kS | 0.0910 kS | ||||||||||
| PD | 330 milliwatts | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts |
