60V dual N-channel HEXFET power MOSFET in an SO-8 package, designed for synchronous rectification in isolated DC-DC converters and low-power motor drive systems. Each MOSFET has a maximum continuous drain current of 8.0A at 25°C and 6.4A at 70°C, with a typical on-resistance of 17.8mΩ at 10V gate drive. The device features a gate-to-source voltage rating of ±20V, a peak pulsed drain current of 64A, and a power dissipation of 2.0W at 25°C. It meets avalanche energy ratings of up to 325mJ and exhibits body diode reverse recovery characteristics with a typical charge of 61nC. The package conforms to EIA-481 and EIA-541 standards, and the part is qualified for industrial use with operational junction temperatures ranging from -55°C to 150°C.
60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Applications
Benefits
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRF7351 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N+N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0178 ohms |
