Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE013N04LM6CGSC IQE013N04LM6CGSC

Description
OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 40 V PQFN 3.3x3.3 Source-Down: IQE013N04LM6CGSC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization). Summary of Features Major reduction in RDS(on) by up to 30% compared to current technology Improved RthJC over current PQFN package technology Standard-gate and center-gate footprints available New, optimized layout possibilities Benefits Enabling highest power density and performance Superior thermal performance Optimized layout possibilities for efficient use of real-estate Simplifying parallel configuration of multiple MOSFETs with center-gate footprint Improved PCB losses Reduced parasitics Potential Applications Drives SMPS Server Telecom OR-ing Battery management Applications 48 V intermediate bus converter (IBC) 48 V to 12 V DC-DC converter Automotive USB power delivery - Head unit Cordless power tools and outdoor power equipment DIN rail power supplies Designers who used this product also designed with XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE013N04LM6CGSC - IQE013N04LM6CGSC - Infineon Technologies AG
    Infineon Technologies AG
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Description
OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 40 V PQFN 3.3x3.3 Source-Down: IQE013N04LM6CGSC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization). Summary of Features Major reduction in RDS(on) by up to 30% compared to current technology Improved RthJC over current PQFN package technology Standard-gate and center-gate footprints available New, optimized layout possibilities Benefits Enabling highest power density and performance Superior thermal performance Optimized layout possibilities for efficient use of real-estate Simplifying parallel configuration of multiple MOSFETs with center-gate footprint Improved PCB losses Reduced parasitics Potential Applications Drives SMPS Server Telecom OR-ing Battery management Applications 48 V intermediate bus converter (IBC) 48 V to 12 V DC-DC converter Automotive USB power delivery - Head unit Cordless power tools and outdoor power equipment DIN rail power supplies Designers who used this product also designed with XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET
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Datasheet
Datasheet Summary
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The IQE013N04LM6CGSC is a 40 V N-channel logic-level MOSFET optimized for synchronous rectification, packaged in a PG-WHTFN-9 surface-mount case measuring 3.20 to 3.40 mm by 3.20 to 3.40 mm. It features a maximum continuous drain current of 205 A, a maximum drain-source on-state resistance of 1.35 mΩ at 20 A and 10 V gate-source voltage, and a total gate charge of 20 to 25 nC for a 0 V to 4.5 V gate drive. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 255 mJ. It meets JEDEC industrial application qualifications, is RoHS compliant, and is halogen-free according to IEC 61249-2-21.

Datasheet Summary
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The IQE013N04LM6CGSC is a 40 V N-channel logic-level MOSFET optimized for synchronous rectification, packaged in a PG-WHTFN-9 surface-mount case measuring 3.20 to 3.40 mm by 3.20 to 3.40 mm. It features a maximum continuous drain current of 205 A, a maximum drain-source on-state resistance of 1.35 mΩ at 20 A and 10 V gate-source voltage, and a total gate charge of 20 to 25 nC for a 0 V to 4.5 V gate drive. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 255 mJ. It meets JEDEC industrial application qualifications, is RoHS compliant, and is halogen-free according to IEC 61249-2-21.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE013N04LM6CGSC - IQE013N04LM6CGSC - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE013N04LM6CGSC
IQE013N04LM6CGSC
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE013N04LM6CGSC IQE013N04LM6CGSC
OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 40 V PQFN 3.3x3.3 Source-Down: IQE013N04LM6CGSC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization). Summary of Features Major reduction in RDS(on) by up to 30% compared to current technology Improved RthJC over current PQFN package technology Standard-gate and center-gate footprints available New, optimized layout possibilities Benefits Enabling highest power density and performance Superior thermal performance Optimized layout possibilities for efficient use of real-estate Simplifying parallel configuration of multiple MOSFETs with center-gate footprint Improved PCB losses Reduced parasitics Potential Applications Drives SMPS Server Telecom OR-ing Battery management Applications 48 V intermediate bus converter (IBC) 48 V to 12 V DC-DC converter Automotive USB power delivery - Head unit Cordless power tools and outdoor power equipment DIN rail power supplies Designers who used this product also designed with XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSZ070N08LS5 | N-Channel Power MOSFET

OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 40 V PQFN 3.3x3.3 Source-Down: IQE013N04LM6CGSC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.

Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management.

Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization).


Summary of Features

  • Major reduction in RDS(on) by up to 30% compared to current technology
  • Improved RthJC over current PQFN package technology
  • Standard-gate and center-gate footprints available
  • New, optimized layout possibilities

Benefits

  • Enabling highest power density and performance
  • Superior thermal performance
  • Optimized layout possibilities for efficient use of real-estate
  • Simplifying parallel configuration of multiple MOSFETs with center-gate footprint
  • Improved PCB losses
  • Reduced parasitics

Potential Applications

  • Drives
  • SMPS
    • Server
    • Telecom
    • OR-ing
  • Battery management

Applications

  • 48 V intermediate bus converter (IBC)
  • 48 V to 12 V DC-DC converter
  • Automotive USB power delivery - Head unit
  • Cordless power tools and outdoor power equipment
  • DIN rail power supplies

Designers who used this product also designed with


  • XDPP1100-Q024 |
    Digital Power Controllers
  • BSZ070N08LS5 |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • BSZ070N08LS5 |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • BSZ070N08LS5 |
    N-Channel Power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IQE013N04LM6CGSC
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE013N04LM6CGSC
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0014 ohms
QG 41 nC
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