Infineon Technologies AG Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| Target Applications: - Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN | |
| Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. | |
| BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz -... | |
| BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 20 mA. Summary of Features: - Cascadable 50... | |
| BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 40 mA. The BGA614 is based on Infineon... | |
| BGA729N6 is a broadband low power low noise amplifier (LNA) MMIC for portable and mobile TV applications which covers a wide frequency range from 70 MHz to 1000 MHz. The... | |
| BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. | |
| BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device... | |
| Si-MMIC-Amplifier in SIEGET® 25-Technologie Summary of Features: - Cascadable 50 Ω-gain block - Unconditionally stable - Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8... | |
| Si-MMIC-Amplifier in SIEGET® 25-Technologie Summary of Features: - Cascadable 50 Ω-gain block - Unconditionally stable - Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S21|2 = 22 dB... | |
| Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Summary of Features: - High insertion power gain: 16.2dB - Out-of-band input 3rd order intercept point: +10dBm - Input... | |
| Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Summary of Features: - High insertion power gain: 19.6 dB - Out-of-band input 3rd order intercept point: -4dBm -... | |
| Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 12.5 dB - Low noise figure: 0.60 dB - Low current consumption: 4.7 mA - Operating... | |
| Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 13.0 dB Low noise figure: 0.60 dB Low current consumption: 4.4 mA Operating frequencies: 1805 -... | |
| Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 13.3 dB - Low noise figure: 0.90 dB - Low current consumption: 4.4 mA - Operating... | |
| The BGA231N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 16.0... | |
| The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 60 mA. The BGA616 is based on... | |
| The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality... | |
| The BGA711N7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and... | |
| The BGA713L7 is a low current single-band low noise amplifier MMIC for UMTS bands XII, XIII, XIV, XVII and XX. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C... | |
| The BGA715N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... | |
| The BGA725L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... | |
| The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735N16... | |
| The BGA748L16 is a highly flexible, high linearity quad-band (2100, 1900, 900, 800 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the... | |
| The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and... | |
| The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and... | |
| The BGA824N6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... | |
| The BGA825L6S is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... | |
| The BGA915N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 15.5... | |
| The BGA925L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS and others. The LNA... | |
| The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features... | |
| The BGB707L7ESD is a wideband Low Noise Amplifier for up to 10 GHz applications. Please specify the target frequency range when you order the evaluation board. Summary of Features: -... | |
| The BGB719N7ESD is a wideband Low Noise Amplifier for up to 1 GHz applications. Please specify the target frequency range when you order the evaluation board. Summary of Features: -... | |
| The BGB741L7ESD is a broadband Low Noise Amplifier for up to 5 GHz applications. Its integrated feedback circuit provides a broadband pre-match to 50 Ω at input and output. Please... |