Infineon Technologies AG Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
Product Name | Notes |
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General Purpose LNAs -- BGB741L7ESD | Target Applications: - Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN |
Low Noise Amplifier MMICs - LTE / 3G LNAs -- BGA5H1BN6
Low Noise Amplifier MMICs - LTE / 3G LNAs -- BGA5M1BN6 Low Noise Amplifier MMICs - LTE / 3G LNAs -- BGA7H1N6 Low Noise Amplifier MMICs - LTE / 3G LNAs -- BGA8U1BN6 Low Noise Amplifier MMICs - LTE / 3G LNAs -- BGA8V1BN6 Low Noise Amplifier MMICs - LTE / 3G LNAs -- BGAU1A10 Low Noise Amplifier MMICs - LTE / 3G LNAs -- BGAV1A10 |
Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. |
Low Noise Amplifier LNA ICs -- BGA416 | BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz -... |
General Purpose LNAs -- BGA612 | BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 20 mA. Summary of Features: - Cascadable 50... |
General Purpose LNAs -- BGA614 | BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 40 mA. The BGA614 is based on Infineon... |
GPS / GLONASS / COMPASS LNA -- BGA729N6 | BGA729N6 is a broadband low power low noise amplifier (LNA) MMIC for portable and mobile TV applications which covers a wide frequency range from 70 MHz to 1000 MHz. The... |
LTE / 3G LNAs -- BGA7H1BN6 | BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. |
LTE / 3G LNAs -- BGA7L1BN6 | BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device... |
General Purpose LNAs -- BGA420 | Si-MMIC-Amplifier in SIEGET® 25-Technologie Summary of Features: - Cascadable 50 Ω-gain block - Unconditionally stable - Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8... |
General Purpose LNAs -- BGA427 | Si-MMIC-Amplifier in SIEGET® 25-Technologie Summary of Features: - Cascadable 50 Ω-gain block - Unconditionally stable - Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S21|2 = 22 dB... |
GPS / GLONASS / COMPASS LNA -- BGA924N6 | Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Summary of Features: - High insertion power gain: 16.2dB - Out-of-band input 3rd order intercept point: +10dBm - Input... |
GPS / GLONASS / COMPASS LNA -- BGA524N6 | Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Summary of Features: - High insertion power gain: 19.6 dB - Out-of-band input 3rd order intercept point: -4dBm -... |
LTE / 3G LNAs -- BGA7H1N6 | Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 12.5 dB - Low noise figure: 0.60 dB - Low current consumption: 4.7 mA - Operating... |
LTE / 3G LNAs -- BGA7M1N6 | Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 13.0 dB Low noise figure: 0.60 dB Low current consumption: 4.4 mA Operating frequencies: 1805 -... |
Low Noise Amplifier LNA ICs -- BGA 7L1N6 | Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 13.3 dB - Low noise figure: 0.90 dB - Low current consumption: 4.4 mA - Operating... |
GPS / GLONASS / COMPASS LNA -- BGA231N7 | The BGA231N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 16.0... |
General Purpose LNAs -- BGA616 | The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 60 mA. The BGA616 is based on... |
GPS / GLONASS / COMPASS LNA -- BGA622L7 | The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality... |
GPS / GLONASS / COMPASS LNA -- BGA711N7 | The BGA711N7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and... |
GPS / GLONASS / COMPASS LNA -- BGA713N7 | The BGA713L7 is a low current single-band low noise amplifier MMIC for UMTS bands XII, XIII, XIV, XVII and XX. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C... |
GPS / GLONASS / COMPASS LNA -- BGA715N7 | The BGA715N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... |
GPS / GLONASS / COMPASS LNA -- BGA725L6 | The BGA725L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... |
GPS / GLONASS / COMPASS LNA -- BGA735N16 | The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735N16... |
Low Noise Amplifier LNA ICs -- BGA748L16 | The BGA748L16 is a highly flexible, high linearity quad-band (2100, 1900, 900, 800 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the... |
GPS / GLONASS / COMPASS LNA -- BGA751N7 | The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and... |
GPS / GLONASS / COMPASS LNA -- BGA777N7 | The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and... |
GPS / GLONASS / COMPASS LNA -- BGA824N6 | The BGA824N6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... |
GPS / GLONASS / COMPASS LNA -- BGA825L6S | The BGA825L6S is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides... |
GPS / GLONASS / COMPASS LNA -- BGA915N7 | The BGA915N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 15.5... |
GPS / GLONASS / COMPASS LNA -- BGA925L6 | The BGA925L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS and others. The LNA... |
Low Noise Amplifier LNA ICs -- BGB707L7ESD | The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features... |
General Purpose LNAs -- BGB707L7ESD BOARD | The BGB707L7ESD is a wideband Low Noise Amplifier for up to 10 GHz applications. Please specify the target frequency range when you order the evaluation board. Summary of Features: -... |
General Purpose LNAs -- BGB719N7ESD BOARD | The BGB719N7ESD is a wideband Low Noise Amplifier for up to 1 GHz applications. Please specify the target frequency range when you order the evaluation board. Summary of Features: -... |
General Purpose LNAs -- BGB741L7ESD BOARD | The BGB741L7ESD is a broadband Low Noise Amplifier for up to 5 GHz applications. Its integrated feedback circuit provides a broadband pre-match to 50 Ω at input and output. Please... |
RF Power Amplifier ICs -- PTMC210204MD V1 | Wideband LDMOS Two-stage Integrated Power Amplifier, 10 W + 10 W, 28 V, 1805 – 2200 MHz Summary of Features: - On-chip matching for broadband operation - Dual independent outputs,... |
RF Power Amplifier ICs -- PTMA210152M V1 | Wideband RF LDMOS Integrated Power Amplifier - 15W, 28V, 1800-2200MHz Summary of Features: - Designed for wide RF bandwidth and low memory effects - Broadband input on-chip matching - Typical... |
RF Power Amplifier ICs -- PTMA080152M V1 | Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Summary of Features: - Broadband on-chip matching, 50-ohm input and ~10-ohm output - Typical GSM/EDGE performance... |
RF Power Amplifier ICs -- PTMA080302M V1 | Wideband RF LDMOS Integrated Power Amplifier, 30 W, 28 V, 700 – 1000 MHz Summary of Features: - Designed for wide RF modulation bandwidths, and low memory effects - On-chip... |
RF Power Amplifier ICs -- PTMA180402M V1 | Wideband RF LDMOS Integrated Power Amplifier, 40 W, 28 V, 1800 – 2100 MHz Summary of Features: - Designed for wide RF bandwidth and low memory effects - Broadband input... |