Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW60R125P6

Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs
Request a Quote Datasheet
Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW60R125P6 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW60R125P6
500V-950V N-Channel Power MOSFET IPW60R125P6
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.


Summary of Features

  • Reduced gate charge (Q g)
  • Higher V th
  • Good body diode ruggedness
  • Optimized integrated R g
  • Improved dv/dt from 50V/ns
  • CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

  • Improved effciency especially in light load condition
  • Better efficiency in soft switching applications due to earlier turn-off
  • Suitable for hard- & soft-switching topologies
  • Optimized balance of efficiency and ease of use and good controllability of switching behavior
  • High robustness and better efficiency
  • Outstanding quality & reliability

Potential Applications

  • PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
  • PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

  • 48 V intermediate bus converter (IBC)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
Supplier's Site Datasheet
MOSFET Transistor 2088-IPW60R125P6
MOSFETs HIGH POWER PRICE/PERFORM Product overview: IPW60R125P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW60R125P6 can be used for catalog matching and distributor lookup.

MOSFETs HIGH POWER PRICE/PERFORM Product overview: IPW60R125P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW60R125P6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPW60R125P6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPW60R125P6
Single FETs, MOSFETs IPW60R125P6
POWER FIELD-EFFECT TRANSISTOR

POWER FIELD-EFFECT TRANSISTOR

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R125P6 - 1186475-IPW60R125P6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R125P6
1186475-IPW60R125P6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R125P6 1186475-IPW60R125P6
Manufacturer: Infineon Technologies Win Source Part Number: 1186475-IPW60R125P6 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186475-IPW60R125P6
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now
Sheung Wan, Hong Kong
MOSFET HIGH POWER PRICE/PERFORM

MOSFET HIGH POWER PRICE/PERFORM

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW60R125P6 2088-IPW60R125P6 IPW60R125P6 1186475-IPW60R125P6 IPW60R125P6
Product Name 500V-950V N-Channel Power MOSFET MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R125P6 MOSFET
Polarity N-Channel; N N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.1250 ohms
QG 56 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data