Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6714MTRPBF IRF6714MTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069332-IRF6714MTRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 29A (Ta), 166A (Tc) Gate-Source Threshold Voltage: 2.4V @ 100μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 3890pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 29A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069332-IRF6714MTRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 29A (Ta), 166A (Tc) Gate-Source Threshold Voltage: 2.4V @ 100μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 3890pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 29A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6714MTRPBF - 069332-IRF6714MTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6714MTRPBF
069332-IRF6714MTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6714MTRPBF 069332-IRF6714MTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069332-IRF6714MTRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 29A (Ta), 166A (Tc) Gate-Source Threshold Voltage: 2.4V @ 100μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 3890pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 29A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 069332-IRF6714MTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 29A (Ta), 166A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 100μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 3890pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 29A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - IRF6714MTRPBF - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
 - IRF6714MTRPBF - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6714MTRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6714MTRPBF-ND
Single FETs, MOSFETs IRF6714MTRPBF-ND
N-Channel 25V 29A (Ta), 166A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 25V 29A (Ta), 166A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
Singapore
N-Channel 25V 29A 29mA MOSFET Transistor
278-IRF6714MTRPBF
N-Channel 25V 29A 29mA MOSFET Transistor 278-IRF6714MTRPBF
MOSFET, 25V, 29A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; No. of Pins:5 ;RoHS Compliant: Yes Product overview: IRF6714MTRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25V, 29A, 29mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 29mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6714MTRPBF can be used for catalog matching and distributor lookup.

MOSFET, 25V, 29A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; No. of Pins:5 ;RoHS Compliant: Yes Product overview: IRF6714MTRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25V, 29A, 29mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 29mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6714MTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 25V 29A DIRECTFET - 376-IRF6714MTRPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 25V 29A DIRECTFET
376-IRF6714MTRPBF
MOSFET N-CH 25V 29A DIRECTFET 376-IRF6714MTRPBF
MOSFET N-CH 25V 29A DIRECTFET

MOSFET N-CH 25V 29A DIRECTFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V 1 N-CH HEXFET 2.1mOhms 29nC

MOSFET 25V 1 N-CH HEXFET 2.1mOhms 29nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6714MTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6714MTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6714MTRPBF
MOSFET N-CH 25V 29A DIRECTFET

MOSFET N-CH 25V 29A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 069332-IRF6714MTRPBF IRF6714MTRPBF IRF6714MTRPBF-ND 278-IRF6714MTRPBF 376-IRF6714MTRPBF IRF6714MTRPBF IRF6714MTRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6714MTRPBF Single FETs, MOSFETs N-Channel 25V 29A 29mA MOSFET Transistor MOSFET N-CH 25V 29A DIRECTFET MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 2800 to 89000 milliwatts 89000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3; DIRECTFET MX WDSON5 DirectFET™ Isometric MX DirectFETTM Isometric MX
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