MOSFET 2P-CH 12V 9.2A 8SO Product overview: IRF7329PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7329PBF can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 12V 9.2A 8-SOIC
Mosfet Array 2 P-Channel (Dual) 12V 9.2A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 1187221-IRF7329PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 P-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Family Part Number: IRF7329PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 9.2A
Rds On (Maximum) at Id, Vgs: 17mOhm at 9.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 57nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 3450pF at 10V
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
MOSFET 2P-CH 12V 9.2A 8SO
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-IRF7329PBF | IRF7329PBF | IRF7329PBF-ND | 1187221-IRF7329PBF | 70017580 | IRF7329PBF |
| Product Name | 12V 9.2A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | FETs - Arrays - IRF7329PBF | MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tube | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | SO-8 | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | |||
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel; 2 P-Channel (Dual) | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
