Infineon Technologies AG FETs - Arrays - IRF7329PBF IRF7329PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187221-IRF7329PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Family Part Number: IRF7329PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 9.2A Rds On (Maximum) at Id, Vgs: 17mOhm at 9.2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA Gate Charge (Qg) (Maximum) at Vgs: 57nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 3450pF at 10V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187221-IRF7329PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Family Part Number: IRF7329PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 9.2A Rds On (Maximum) at Id, Vgs: 17mOhm at 9.2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA Gate Charge (Qg) (Maximum) at Vgs: 57nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 3450pF at 10V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Arrays - IRF7329PBF - 1187221-IRF7329PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - IRF7329PBF
1187221-IRF7329PBF
FETs - Arrays - IRF7329PBF 1187221-IRF7329PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187221-IRF7329PBF Packaging: Tube Mounting Style: SMD FET Feature: Logic Level Gate Transistor Polarity: 2 P-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Family Part Number: IRF7329PBF Manufacturer Pack Quantity: 3,800 MSL Level: 1 (Unlimited) Maximum Power: 2W Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 9.2A Rds On (Maximum) at Id, Vgs: 17mOhm at 9.2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA Gate Charge (Qg) (Maximum) at Vgs: 57nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 3450pF at 10V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187221-IRF7329PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 P-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Family Part Number: IRF7329PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 9.2A
Rds On (Maximum) at Id, Vgs: 17mOhm at 9.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 57nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 3450pF at 10V

Buy Now
FET, MOSFET Arrays - IRF7329PBF - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7329PBF
FET, MOSFET Arrays IRF7329PBF
MOSFET 2P-CH 12V 9.2A 8-SOIC

MOSFET 2P-CH 12V 9.2A 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - IRF7329PBF-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7329PBF-ND
FET, MOSFET Arrays IRF7329PBF-ND
Mosfet Array 2 P-Channel (Dual) 12V 9.2A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 12V 9.2A 2W Surface Mount 8-SO

Buy Now Datasheet
12V 9.2A MOSFET Transistor - 289-IRF7329PBF - ERSAELECTRONICS PTE. LTD.
Singapore
12V 9.2A MOSFET Transistor
289-IRF7329PBF
12V 9.2A MOSFET Transistor 289-IRF7329PBF
MOSFET 2P-CH 12V 9.2A 8SO Product overview: IRF7329PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7329PBF can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 12V 9.2A 8SO Product overview: IRF7329PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7329PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de - 70017580 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
70017580
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de 70017580
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de

MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7329PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7329PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7329PBF
MOSFET 2P-CH 12V 9.2A 8SO

MOSFET 2P-CH 12V 9.2A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187221-IRF7329PBF IRF7329PBF IRF7329PBF-ND 289-IRF7329PBF 70017580 IRF7329PBF
Product Name FETs - Arrays - IRF7329PBF FET, MOSFET Arrays FET, MOSFET Arrays 12V 9.2A MOSFET Transistor MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; 2 P-Channel (Dual) P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 12 volts 12 volts -12 volts
QG 57 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" Tube SO-8
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