Infineon Technologies AG FETs - Single - IRF5305LPBF IRF5305LPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187043-IRF5305LPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 3.8W, 110W Alternative Parts (Cross-Reference): IRF5305PBF; IRF5305L; IRF5305STRL; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 31A Rds On (Maximum) at Id, Vgs: 60mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187043-IRF5305LPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 3.8W, 110W Alternative Parts (Cross-Reference): IRF5305PBF; IRF5305L; IRF5305STRL; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 31A Rds On (Maximum) at Id, Vgs: 60mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF5305LPBF - 1187043-IRF5305LPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF5305LPBF
1187043-IRF5305LPBF
FETs - Single - IRF5305LPBF 1187043-IRF5305LPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187043-IRF5305LPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 3.8W, 110W Alternative Parts (Cross-Reference): IRF5305PBF; IRF5305L; IRF5305STRL; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 31A Rds On (Maximum) at Id, Vgs: 60mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187043-IRF5305LPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.8W, 110W
Alternative Parts (Cross-Reference): IRF5305PBF; IRF5305L; IRF5305STRL;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 31A
Rds On (Maximum) at Id, Vgs: 60mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

Buy Now
Singapore
55V 31A MOSFET Transistor
278-IRF5305LPBF
55V 31A MOSFET Transistor 278-IRF5305LPBF
MOSFET P-CH 55V 31A TO262 Product overview: IRF5305LPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5305LPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 55V 31A TO262 Product overview: IRF5305LPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5305LPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF5305LPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF5305LPBF-ND
Single FETs, MOSFETs IRF5305LPBF-ND
P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262

P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF5305LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF5305LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF5305LPBF
MOSFET P-CH 55V 31A TO262

MOSFET P-CH 55V 31A TO262

Supplier's Site
Fort Worth, TX, USA
MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262
70018222
MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262 70018222
MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262

MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187043-IRF5305LPBF 278-IRF5305LPBF IRF5305LPBF-ND IRF5305LPBF 70018222
Product Name FETs - Single - IRF5305LPBF 55V 31A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 55 volts
QG 63 nC
PD 3800 to 110000 milliwatts 3800 milliwatts
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