MOSFET P-CH 55V 31A TO262 Product overview: IRF5305LPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5305LPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1187043-IRF5305LPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.8W, 110W
Alternative Parts (Cross-Reference): IRF5305PBF; IRF5305L; IRF5305STRL;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 31A
Rds On (Maximum) at Id, Vgs: 60mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V
P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262
MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262
MOSFET P-CH 55V 31A TO262
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF5305LPBF | 1187043-IRF5305LPBF | IRF5305LPBF-ND | 70018222 | IRF5305LPBF |
| Product Name | 55V 31A MOSFET Transistor | FETs - Single - IRF5305LPBF | Single FETs, MOSFETs | MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3800 milliwatts | 3800 to 110000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | Tube | SOT3 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| Packing Method | Tube | Tube; Tube | Tube; Tube |