Power Field-Effect Transistor
N-Channel 600V 101A (Tc) 291W (Tc) Through Hole PG-TO247-4-3
MOSFET, N-CH, 600V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:600V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:-; TransistorRoHS Compliant: Yes
MOSFET N-CH 600V 101A TO247-4-3
| Rochester Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPZA60R024P7XKSA1 | 448-IPZA60R024P7XKSA1-ND | 84AC6846 | IPZA60R024P7XKSA1 | IPZA60R024P7XKSA1 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, To-247; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | TO-247; TO-247-4 | TO-247; TO-247-4 | TO-3; TO-247 | PG-TO247-4-3 |
